L2SC4226T1G LRC | Alldatasheet

Document overview

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Technical content

The information in this document is subject to change without notice. 1993

DESCRIPTION

The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package.

FEATURES

  • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, V CE = 3 V, I C = 7 mA
  • High Gain 21e = 9.0 dB TYP. @ f = 1 GHz, V CE = 3 V, I C = 7 mA
  • Small Mini Mold Package EIAJ: SC-70 L2SC4226T1G SC-70/SOT-323 Driver Marking L2SC4226T1G=R2 LESHAN RADIO COMPANY, LTD. Device Marking Shipping 3000/Tape&Reel L2SC4226T3G R2 10000/Tape&Reel L2SC4226T1G R2

Ordering Information

We declare that the material of product compliance with RoHS requirements. Rev.O 1/5

ABSOLUTE MAXIMUM RATINGS (T A = 25 Collector to Base Voltag e V CBO 20 V Collector to Emitter Voltage V CEO 12 V Emitter to Base Voltage V EBO Collector Current I C 100 mA Total Power Dissipation P T 150 mW Junction Temperature T j 150 °C Storage Temperature T stg –65 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current I CBO 1.0 µ AV CB = 10 V, I E = 0 Emitter Cutoff Current I EBO 1.0 µ AV EB = 1 V, I C = 0 DC Current Gain h FE 40 110 250 V CE = 3 V, I C = 7 mA * Gain Bandwidth Product f T 3.0 4.5 GHz V CE = 3 V, I C = 7 mA Feed back Capacitance C re 0.7 1.5 pF V CE = 3 V, I E = 0, f = 1 MHz * Insertion Power Gain |S 21e 79 d B V CE = 3 V, I C = 7 mA, f = 1 GHz Noise Figure NF 1.2 2.5 dB V CE = 3 V, I C = 7 mA, f = 1 GHz *1 Pulse Measurement ; PW ≤ 350 µ s, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. LESHAN RADIO COMPANY, LTD. Rev.O 2/5

TYPICAL CHARACTERISTICS (T A = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE T A – Ambient Temperature – °C P T – Total Power Dissipation – mW COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE V BE – Base to Emitter Voltage – V I C – Collector Current – mA COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE V CE – Collector to Emitter Voltage – V I C – Collector Current – mA DC CURRENT GAIN vs. COLLECTOR CURRENT I C – Collector Current – mA h FE – DC Current Gain GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT I C – Collector Current – mA f T – Gain Bandwidth Product – GHz INSERTION POWER GAIN vs. COLLECTOR CURRENT I C – Collector Current – mA 21e – Insertion Power Gain – dB V CE = 3 V f = 1.0 GHz 200 100 0 0.5 1.0 V CE = 3 V 0 5 10 V CE = 3 V f = 1.0 GHz 200 100 0.5 1 5 10 50 V CE = 3 V I B 160 A Free Air 0 50 100 150 µ 140 A µ 120 A µ 100 A µ A µ A µ A µ A µ 0.5 1 5 10 50 0.5 1 5 10 50 100 LESHAN RADIO COMP ANY , LTD. L2SC4226 T1G Rev.O 3/5

NOISE FIGURE vs. COLLECTOR CURRENT I C – Collector Current – mA NF – Noise Figure – dB INSERTION POWER GAIN vs. FREQUENCY f – Frequency – GHz 21e – Insertion Power Gain – dB FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE V CB – Collector to Base Voltage – V C re – Feed-back Capacitance – pF 0.5 1 5 10 50 100 V CE = 3 V f = 1 GHz V CE = 3 V I C = 7 mA 1 2 5 10 20 50 f = 1 MHz 5.0 1.0 0.5 0.2 0.1 2.0 LESHAN RADIO COMP ANY , LTD. L2SC4226 T1G Rev.O 4/5

0.7 1.9 0.028 0.65 0.025 0.65 0.025 inches mm 0.075 0.035 0.9 PIN 1. BASE 2. EMITTER 3. COLLECTOR NOTES: DIMENSION I NG AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.071 0.087 1.80 2.20 K 0.017 REF 0.425 REF L 0.026 BSC 0.650 BSC N 0.028 REF 0.700 REF S 0.079 0.095 2.00 2.40 B 0.045 0.053 1.15 1.35 C 0.032 0.040 0.80 1.00 D 0.012 0.016 0.30 0.40 G 0.047 0.055 1.20 1.40 H 0.000 0.004 0.00 0.10 J 0.004 0.010 0.10 0.25 C N A L D G S B H J K 0.05 (0.002) SC 70 / SOT 323 LESHAN RADIO COMP ANY , LTD. L2SC4226 T1G Rev.O 5/5