L2SC4081QT1G LRC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC4081QT1G Series SC-70/SOT– 323 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 50 V Collector–Base Voltage V CBO 60 V Emitter–Base Voltage V EBO 7.0 V Collector Current — Continuous I C 150 mAdc Collector power dissipation P C 0.15 W Junction temperature T j 150 °C Storage temperature T stg +150 °C EMITTER COLLECTOR BASE NPN Silicon FEATURE ƽLow Cob,Cob=2pF(Typ.). ƽEpitaxial planar type. ƽPNP complement:L2SA1576A ƽ DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SC4081QT1G BQ 3000/Tape&Reel L2SC4081QT3G BQ 10000/Tape&Reel L2SC4081RT1G BR 3000/Tape&Reel L2SC4081RT3G BR 10000/Tape&Reel L2SC4081ST1G BS 3000/Tape&Reel L2SC4081ST3 G BS 10000/Tape&Reel We declare that the material of product compliance with RoHS requirements. Rev.O 1/5

LESHAN RADIO COMPANY, LTD.

ELECTRICAL CHARACTERISTICS

A = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage V (BR)CEO 50 — — V C = 1 mA) Emitter–Base Breakdown Voltage V (BR)EBO 7— — V E = 50 µA) Collector–Base Breakdown Voltage V (BR)CBO 60 — — V C = 50 µA) Collector Cutoff Current I CBO — — 0.1 µA CB = 60 V) Emitter cutoff current I EBO — — 0.1 µA EB = 7 V) Collector-emitter saturation voltage V CE(sat) — — 0.4 V C / I B = 50 mA / 5m A) DC current transfer ratio h FE 120 –– 560 –– CE = 6 V, I C = 1mA) Transition frequency f T — 180 –– MHz CE = 12 V, I E = – 2mA, f =30MHz ) Output capacitance C ob — 2.0 3.5 pF CB = 12 V, I E = 0A, f =1MHz ) L2SC4081QT1G Series h FE values are classified as follows: QR S h FE 120~270 180~390 270~560 Rev.O 2/5

LESHAN RADIO COMPANY, LTD. T A = 100°C 25°C – 55°C 0.5 0.2 0.1 T A = 25°C 100 I C , COLLECTOR CURRENT (mA) Fig.1 Grounded emitter propagation characteristicsFig.2 Grounded emitter output characteristics( ) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current V CE = 6 V V BE , BASE TO EMITTER VOLTAGE(V) I C , COLLECTOR CURRENT (mA) V CE , COLLECTOR TO EMITTER VOLTAGE (V) 0 481 21 6 2 0 I C , COLLECTOR CURRENT (mA) V CE , COLLECTOR TO EMITTER VOLTAGE (V) 500 200 100 h FE , DC CURRENT GAIN I C , COLLECTOR CURRENT (mA) 0.2 0.5 1 2 5 10 20 50 100 200 500 200 100 h FE , DC CURRENT GAIN I C , COLLECTOR CURRENT (mA) 0.5 0.2 0.1 0.05 0.02 0.01 V CE(sat) , COLLECTOR SATURATION VOLTAGE(V) I C , COLLECTOR CURRENT (mA) 0.50mA 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 L2SC4081QT1G Series Rev.O 3/5

LESHAN RADIO COMPANY, LTD. Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat) , COLLECTOR SATURATION VOLTAGE(V) I C , COLLECTOR CURRENT (mA) 0.2 0.5 1 2 5 10 20 50 100 Fig.9 Gain bandwidth product vs. emitter current 500 200 100 f r , TRANSITION FREQUENCY(MHz) I E , EMITTER CURRENT (mA) Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CB , COLLECTOR TO BASE VOLTAGE (V) V EB , EMITTER TO BASE VOLTAGE (V) 0.2 0.5 1 2 5 10 20 50 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 V CE(sat) , COLLECTOR SATURATION VOLTAGE(V) I C , COLLECTOR CURRENT (mA) 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 Fig.11 Base-collector time constant vs.emitter current 200 100 C c r bb , BASE COLLECTOR TIME CONSTANT( ps) I E , EMITTER CURRENT (mA) L2SC4081QT1G Series Rev.O 4/5

LESHAN RADIO COMPANY, LTD. SC 70 / SOT 323 L2SC4081QT1G Series A A2 D b e E c L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches SCALE 10:1 XX M XX = Specific Device Code M = Date Code = Pb−Free Package GENERIC MARKING DIAGRAM *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. SOLDERING FOOTPRINT* H E DIM A MIN NOM MAX MIN MILLIMETERS 0.80 0.90 1.00 0.032 INCHES A1 0.00 0.05 0.10 0.000 A2 0.7 REF b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 NOM MAX L 2.00 2.10 2.40 0.079 0.083 0.095 H E e1 0.65 BSC

0.425 REF

0.028 REF

0.026 BSC

0.017 REF

Rev.O 5/5