L2SC3356RLT1G LRC | Alldatasheet

Document overview

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Technical content

DESCRIPTION

is an N PN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

FEATURES

  • Low Noise and High Gain NF = 1.1 dB TYP., G a = 11 dB TYP. @V CE = 10 V, I C = 7 mA, f = 1.0 GHz
  • High Power Gain MAG = 13 dB TYP. @V CE = 10 V, I C = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (T A = 25 /G01/G01 C) Collector to Base Voltage V CBO 20 V Collector to Emitter Voltage V CEO 9 V Emitter to Base Voltage V EBO 3.0 V Collector Current I C 100 mA Total Power Dissipation P T 200 mW Junction Temperature T j 150 /G01 C Storage Temperature T stg /G02 65 to +150 /G01 C ELECTRICAL CHARACTERISTICS (T A = 25 /G01/G01 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current I CBO 1.0 /G01 AV CB = 10 V, I E = 0 Emitter Cutoff Current I EBO 1.0 /G01 AV EB = 1.0 V, I C = 0 DC Current Gain h FE 75 170 290 V CE = 8 V, I C = 25 mA Gain Bandwidth Product f T

7 GHz V

= 10 V, I C = 20 mA Feed-Back Capacitance C re ** 0.55 1.0 pF V CB = 10 V, I E = 0, f = 1.0 MHz Insertion Power Gain /G01 S e/G01 11.5 dB V CE = 10 V, I C = 20 mA, f = 1.0 GHz Noise Figure NF 1.1 2.0 dB V CE = 10 V, I C = 7 mA, f = 1.0 GHz * Pulse Measurement PW /G03 350 /G01 s, Duty Cycle /G03 2 % * The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. LESHAN RADIO COMPANY, LTD. Driver Marking L2SC3356RLT1G=24R L2SC3356RLT1G SOT-23

  • We declare that the material of product compliance with RoHS requirements.

ORDERING INFORMATION

3000/Tape & Reel 24R 10000/Tape & Reel 24RL2SC3356RLT3G Rev.O 1/4 S-L2SC3356RLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC3356RLT1G S-L2SC3356RLT3G

TYPICAL CHARACTERISTICS (T A = 25 /G01 /G01 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 100 200 5 10 0.5 100 150 T A -Ambient Temperature- C I C -Collector Current-mA DC CURRENT GAIN vs. COLLECTOR CURRENT P T -Total Power Dissipation-mW h FE -DC Current Gain V CE = 10 V 0.5 1 5 10 50 70 I C -Collector Current-mA INSERTION GAIN vs. COLLECTOR CURRENT 21e -Insertion Gain-dB V CE = 10 V f = 1.0 GHz 0.3 0.5 0 0.5 1 2 5 10 20 30 V CB -Collector to Base Voltage-V FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE C re -Feed-back Capacitance-pF f = 1.0 MHz 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 0 0.5 1.0 10 5.0 30 I C -Collector Current-mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT f T -Gain Bandwidth Product-MHz V CE = 10 V f-Frequency-GHz INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY G max -Maximum Gain-dB 21e -Insertion Gain-dB V CE = 10 V I C = 20 mA G max 21e Free Air LESHAN RADIO COMPANY, LTD. L2SC3356RLT1G Rev.O 2/4 ;S-L2SC3356RLT1G

0.5 1 5 10 50 70 I C -Collector Current-mA NOISE FIGURE vs. COLLECTOR CURRENT NF-Noise Figure-dB V CE = 10 V f = 1.0 GHz 2468 1 0 V CE -Collector to Emitter Voltage-V NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE NF-Noise Figure-dB 21e -Insertion Gain-dB f = 1.0 GHz I C = 20 mA 21e NF LESHAN RADIO COMPANY, LTD. Rev.O 3/4 L2SC3356RLT1G ;S-L2SC3356RLT1G

D J K L A C B S H G V mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 N O T E S DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. I NCH ES M I LL I M E T E R S D I M M I N M A X M I N M A X A 102 197 B 472 551 C 350 440 D 150 200 G 701 807 H 005 040 013 100 J 034 070 085 177 K L 350 401 S 830 039 V 177 236 P I N BASE E M I TT E R C O L L E C T O R 0.03 SOT-23 LESHAN RADIO COMPANY, LTD. Rev.O 4/4 L2SC3356RLT1G ;S-L2SC3356RLT1G