L2SC2412KQLT1 LRC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 SOT– 23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 50 V Collector–Base Voltage V CBO 60 V Emitter–Base Voltage V EBO 7.0 V Collector Current — Continuous I C 150 mAdc Collector power dissipation P C 0.2 W Junction temperature T j 150 °C Storage temperature T stg -55~+150 °C DEVICE MARKING L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage V (BR)CEO 50 — — V (IC = 1 mA) Emitter–Base Breakdown Voltage V (BR)EBO 7— — V (IE = 50 µA) Collector–Base Breakdown Voltage V (BR)CBO 60 — — V (IC = 50 µA) Collector Cutoff Current ICBO — — 0.1 µA (VCB = 60 V) Emitter cutoff current IEBO — — 0.1 µA (VEB = 7 V) Collector-emitter saturation voltage V CE(sat) — — 0.4 V (IC / IB = 50 mA / 5m A) DC current transfer ratio h FE 120 –– 560 –– (V CE = 6 V, I C = 1mA) Transition frequency fT — 180 –– MHz (V CE = 12 V, I E= – 2mA, f =30MHz ) Output capacitance C ob — 2.0 3.5 pF (V CB = 12 V, I E= 0A, f =1MHz ) h FE values are classified as follows: QR S hFE 120~270 180~390 270~560 EMITTER COLLECTOR BASE L2SC2412K*LT1-1/3
- Pb−Free Package is Available. Device Marking Shipping L2SC2412KQLT1 L2SC2412KRLT1 L2SC2412KSLT1 L2SC2412KQLT1G L2SC2412KRLT1G L2SC2412KSLT1G BQ BR G BQ(Pb-Free) BR(Pb-Free) G 1F(Pb-Free)
3000 Tape & Reel
ORDERING INFORMATION
LESHAN RADIO COMPANY, LTD. L2SC2412K*LT1 T A = 100°C 25°C – 55°C 0.5 0.2 0.1 T A = 25°C 100 IC , COLLECTOR CURRENT (mA) Fig.1 Grounded emitter propagation characteristicsFig.2 Grounded emitter output characteristics( ) Fig.3 Grounded emitter output characteristics( )Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( )Fig.6 Collector-emitter saturation voltage vs. collector current VCE = 6 V V BE , BASE TO EMITTER VOLTAGE(V) IC , COLLECTOR CURRENT (mA) V CE , COLLECTOR TO EMITTER VOLTAGE (V) 0 481 21 6 2 0 IC , COLLECTOR CURRENT (mA) V CE , COLLECTOR TO EMITTER VOLTAGE (V) 500 200 100 h FE , DC CURRENT GAIN IC , COLLECTOR CURRENT (mA) 0.2 0.5 1 2 5 10 20 50 100 200 500 200 100 h FE , DC CURRENT GAIN IC , COLLECTOR CURRENT (mA) 0.5 0.2 0.1 0.05 0.02 0.01 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) IC , COLLECTOR CURRENT (mA) 0.50mA 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 L2SC2412K*LT1-2/3
LESHAN RADIO COMPANY, LTD. Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) IC , COLLECTOR CURRENT (mA) 0.2 0.5 1 2 5 10 20 50 100 L2S2412K*LT1 Fig.9 Gain bandwidth product vs. emitter current 500 200 100 fr, TRANSITION FREQUENCY(MHz) IE, EMITTER CURRENT (mA) Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CB , COLLECTOR TO BASE VOLTAGE (V) V EB , EMITTER TO BASE VOLTAGE (V) 0.2 0.5 1 2 5 10 20 50 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) IC , COLLECTOR CURRENT (mA) 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 Fig.11 Base-collector time constant vs.emitter current 200 100 C c-rbb, BASE COLLECTOR TIME CONSTANT( ps) IE, EMITTER CURRENT (mA) L2SC2412K*LT1-3/3