L2SA812LT1

L2SA812LT1 LRC | Alldatasheet

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General Purpose Transistors MAXIMUM RATINGS Symbol L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO V Collector current-continuoun IC -150 mAdc THERMAL CHARATEERISTICS Symbol Max Unit Total Device Dissipation FR-5 Board, (1) PD 200 mW 1.8 mW/oC Thermal Resistance, Junction to Ambient R θ JA 556 oC/W PD 200 mW 2.4 mW/oC Thermal Resistance, Junction to Ambient R θJA 417 oC/W Junction and Storage Temperature Tj ,Tstg -55 to +150 oC Total Device Dissipation Derate above 25oC Rating TA=25oC Derate above 25oC Alumina Substrate, (2) TA=25 oC Characteristic L2SA812-1/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 SOT-23 EMITTER COLLECTOR BASE FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking L2SA812QLT1 L2SA812QLT1G (Pb-Free) L2SA812RLT1 L2SA812RLT1G (Pb-Free) L2SA812SLT1 L2SA812SLT1G (Pb-Free) 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel

LESHAN RADIO COMPANY, LTD. L2SA812*LT1 Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hFE 120 560 (IC=-1mA,VCE=-6.0V) Collector-Emitter Saturation Voltage (IC=-100mA,IB=-10mA) VCE(sat) -0.18 -0.3 V Base -Emitter On Voltage IE=-1.0mA,VCE=-6.0V) VBE -0.58 -0.62 -0.68 V SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product Ft 180 MHz (VCE=-6.0V,IE =-10mA) Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) Cobo 4.5 pF hFE Values are classified as followes NOTE: Q R S hFE 120~270 180~390 270~560 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO -50 V (IC=-1mA) Emitter-Base Breakdown Voltage V(BR)EBO V (IE=-50 µΑ ) Collector-Base Breakdown Voltage V(BR)CBO -60 V (IC=-50 µA) Collector Cutoff Current (VCB=-50V) ICBO -0.1 µA Emitter Cutoff Current (VBE=-6V) IEBO -0.1 µA

LESHAN RADIO COMPANY, LTD. L2SA812*LT1 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6 T A = 100°C 25°C – 40°C –50 –20 –10 –50 –0.5 –0.2 –0.1 –0.4 –0.8 –1.2 –1.6 –2.0 T A = 25°C –10 I C, COLLECTOR CURRENT (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) VCE= –10 V V BE , BASE TO EMITTER VOLTAGE(V) I C, COLLECTOR CURRENT (mA) V CE , COLLECTOR TO EMITTER VOLTAGE (V) –35.0 –31.5 –28.0 –24.5 –21.0 –17.5 –14.0 –10.5 –7.0 –3.5µA I B =0 T A = 25°C –100 –80 –60 –40 –20 I C, COLLECTOR CURRENT (mA) V CE , COLLECTOR TO EMITTER VOLTAGE (V) –250 –200 –150 500 450 400 350 300 –100 –50 µA I B =0 T A = 25°C 500 200 100 h FE, DC CURRENT GAIN VCE= –5 V –3V –1V I C, COLLECTOR CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 T A = 100°C 500 200 100 h FE, DC CURRENT GAIN VCE= – 6V I C, COLLECTOR CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 25°C –40°C –0.5 –0.2 –0.1 –0.05 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) I C, COLLECTOR CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 T A = 25°C I C /I B = 50

LESHAN RADIO COMPANY, LTD. Fig.7 Collector-emitter saturation voltage vs. collector current ( ) –0.5 –0.2 –0.1 –0.05 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) I C, COLLECTOR CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 T A = 100°C 25°C –40°C I C /I B = 10 L2SA812*LT1 Fig.8 Gain bandwidth product vs. emitter current 1000 500 200 100 f r , TRANSITION FREQUENCY(MHz) I E, EMITTER CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 T A = 25°C V CE = –12V Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) –0.5 –10 –20 T A = 25°C f =1MHz I E = 0A I C = 0A C ib C ob

LESHAN RADIO COMPANY, LTD. D J K L A C B S H G V mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.031 0.8 SOT-23 L2SA812-5/5 L2SA812*LT1