L2SA1037AKSLT1

L2SA1037AKLT1 LRC | Alldatasheet

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LM35–1/3 LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –50 V Collector–Base Voltage V CBO –60 V Emitter–Base Voltage V EBO –6.0 V Collector Current — Continuous I C –150 mAdc Collector power dissipation P C 0.2 W Junction temperature T j 150 Storage temperature T stg -55 ~+150 DEVICE MARKING L2SA1037AKQLT1 =FQ L2SA1037AKSLT1 =G3F L2SA1037AKRLT1 =FR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage V (BR)CEO – 50 V (IC = –1 mA) Emitter–Base Breakdown Voltage V (BR)EBO – 6 V (IE = – 50 µA) Collector–Base Breakdown Voltage V (BR)CBO – 60 V (IC = – 50 µA) Collector Cutoff Current I CBO – 0.1 µA (VCB = – 60 V) Emitter cutoff current I EBO – 0.1 µA (VEB = – 6 V) Collector-emitter saturation voltage V CE(sat) -0.5 V (IC/ IB = – 50 mA / – 5m A) DC current transfer ratio h FE 120 560 (V CE = – 6 V, I C= –1mA) Transition frequency f T 140 MHz (V CE = – 12 V, I E= 2mA, f=30MHz ) Output capacitance C ob 4.0 5.0 pF (V CB = – 12 V, I E= 0A, f =1MHz ) h FE values are classified as follows: Q R S hFE 120~270 180~390 270~560 SOT– 23 EMITTER COLLECTOR BASE L2SA1037AK*LT1

LM35–2/3 LESHAN RADIO COMPANY, LTD. L2SA1037AK*LT1 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6 T A = 100°C 25°C – 40°C –50 –20 –10 –50 –0.5 –0.2 –0.1 –0.4 –0.8 –1.2 –1.6 –2.0 T A = 25°C –10 I C, COLLECTOR CURRENT (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) VCE= –10 V V BE , BASE TO EMITTER VOLTAGE(V) I C, COLLECTOR CURRENT (mA) V CE , COLLECTOR TO EMITTER VOLTAGE (V) –35.0 –31.5 –28.0 –24.5 –21.0 –17.5 –14.0 –10.5 –7.0 –3.5µA I B =0 T A = 25°C –100 –80 –60 –40 –20 I C, COLLECTOR CURRENT (mA) V CE , COLLECTOR TO EMITTER VOLTAGE (V) –250 –200 –150 500 450 400 350 300 –100 –50 µA I B =0 T A = 25°C 500 200 100 h FE, DC CURRENT GAIN VCE= –5 V –3V –1V I C, COLLECTOR CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 T A = 100°C 500 200 100 h FE, DC CURRENT GAIN VCE= – 6V I C, COLLECTOR CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 25°C –40°C –0.5 –0.2 –0.1 –0.05 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) I C, COLLECTOR CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 T A = 25°C I C /I B = 50

LM35–3/3 LESHAN RADIO COMPANY, LTD. Fig.7 Collector-emitter saturation voltage vs. collector current ( ) –0.5 –0.2 –0.1 –0.05 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) I C, COLLECTOR CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 T A = 100°C 25°C –40°C I C /I B = 10 L2SA1037AK*LT1 Fig.8 Gain bandwidth product vs. emitter current 1000 500 200 100 f r , TRANSITION FREQUENCY(MHz) I E, EMITTER CURRENT (mA) –0.2 –0.5 –10 –20 –50 –100 T A = 25°C V CE = –12V Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) –0.5 –10 –20 T A = 25°C f =1MHz I E = 0A I C = 0A C ib C ob