L2SA1036KLT1 LRC | Alldatasheet

Document overview

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Technical content

Features

1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Pb-Free Package May be Available. Structure Epitaxial planar type PNP silicon transistor The G.Suffix Denotes a Pb-Free Lead Finish

ORDERING INFORMATION

L2SA1036K*LT1 3000/Tape & Reel SOT-23 L2SA1036K*LT1G SOT-23 3000/Tape & Reel L2SA1036K*LT1-1/4

LESHAN RADIO COMPANY,LTD. Symbol Min. Typ. Max. Unit BVCBO — 40 V BVCEO — 32 V BVEBO — 5 V ICBO — 1 µA IEBO — 1 µA VCE(sat) — 0.4 V hFE 390 fT 200 MHZ Cob pF Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ration VCB= — 20v VEB= — 4V IC/IB= — 100mA/ — 10mA VCE= — 3V,Ic= — 10mA Conditions IC= — 100µA Ic= — 1mA IE= — 100µA VCE= — 5V,IE=20mA,f=100MHz VCB= — 10V,IE=0A,f=1MHz Transition frequence Output capacitance Electrical characteristics (Ta = 25C) L2SA1036K*LT1 hFE values are classified as follows. L2SA1036K*LT1-2/4

LESHAN RADIO COMPANY,LTD. Electrical characteristic curves L2SA1036K*LT1 L2SA1036K*LT1-3/4

LESHAN RADIO COMPANY,LTD. D J K L A C B S H G V mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.031 0.8 SOT-23 L2SA1036K*LT1 L2SA1036K*LT1-4/4