L2N7002SDW1T1G LRC | Alldatasheet

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Technical content

  1. FEATURES
  • We declare that the material of product compliance with RoHS requirements and Halogen Free.
  • S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • ESD protected
  • Low RDS(on) 2. APPLICATIONS
  • Low side load switch
  • Level shift circuits
  • DC−DC converter
  • Portable applications i.e. DSC, PDA, Cell Phone, etc. 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25º C) – Steady State TA = 25° C TA = 85° C – t<5s TA = 25° C TA = 85° C Pulsed Drain Current (tp=10μs) Source Current (Body Diode) L2N7002SDW1T1G S-L2N7002SDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-88 320 230 IDM 1.5 L2N7002SDW1T3G 701 10000/Tape&Reel Parameter Symbol Limits Device Gate-Source Voltage VGS ± 20 380 270 Unit Drain–Source Voltage VDSS Marking Shipping L2N7002SDW1T1G 701 3000/Tape&Reel Drain Current ID Vdc Vdc mAdc A IS 300 mA SC88(SOT-363) Leshan Radio Company, LTD. Rev.O Dec 2015 1/7

L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 5. THERMAL CHARACTERISTICS Total Device Dissipation(Note 1) – Steady State – t<5s Junction−to−Ambient(Note 1) – Steady State – t<5s Junction and Storage temperature 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = 250μAdc) Zero Gate Voltage Drain Current TJ = 25° C (VGS = 0, VDS = 60 Vdc) TJ = 125° C (VGS = 0, VDS = 50 Vdc) TJ = 25° C Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = - 20 Vdc) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 250μAdc) Negative Threshold Temperature Coefficient Static Drain–Source On–State Resistance (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 4.5 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 5.0 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Gate−Source ESD Rating(HBM, Method 3015) pF pF Ciss - 21 Coss Crss - 12 - 0.35 pF Typ. Max. IGSSR - - -10 Drain−to−Source Breakdown Voltage Temperature Coefficient VBRDSS/TJ - -71 μAdc μAdc μAdc Ω - - ºC Unit VBRDSS Vdc 60 - - −55∼+150 Symbol Min. TJ,Tstg 1.0 Vdc 100 IGSSF - - 10 - 2.8 2.0 - - - 3.2 gfs mS 80 - - VGS(th) IDSS RDS(on) 1.0 Unit mW ºC PD TL 420 260 417 ESD 2000 V 300 RΘJA 300 º C/W Symbol LimitsParameter Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) mV/ºC 500 nAdc VGS(TH)/TJ 4- - mV/ºC 0.2 - 0.1 - nC VGS = 4.5 V, VDS = 10 V; ID= 500 mA QG(TOT) QGS QGD 0.44 Leshan Radio Company, LTD. Rev.O Dec 2015 2/7 0.7

L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)(Con.) SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 0.5A, VGS = 0 V) VDS = 30 V, VGEN = 10 V, ID = 500 mA,RG =25Ω ,RL =60Ω td(on) td(off) tr tf VSD Vdc - 0.85 - ns 13 - 8 - 2.7 - 2.5 - Leshan Radio Company, LTD. Rev.O Dec 2015 3/7

L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES Leshan Radio Company, LTD. Rev.O Dec 2015 4/7 Output Characteristics Drain-Source On Resistance I D - Drain Current (A) R DS(ON) - On Resistance (Ω) V DS - Drain-Source Voltage (V) I D - Drain Current (A) Transfer Characteristics Gate Threshold Voltage R DS(ON) - On Resistance (Ω) Normalized Threshold Voltage V GS - Gate-Source Voltage (V) T j - Junction Temperature (°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V GS = 4.5V V GS = 10 V -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 I DS = 250 μ A 123456789 1 0 I D = 0.5 A 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.0 V 4.0 V 3.0 V V GS = 5,6,7.8,9.10 V

L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. Rev.O Dec 2015 5/7 Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance I S - Source Current (A) T j - Junction Temperature (°C) V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pF) V GS - Gate-Source Voltage (V) V DS - Drain-Source Voltage (V) Q G - Gate Charge (nC) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 R ON j = 25 o C: 1.5 Ω V GS = 10 V I D = 0.5 A 0.01 0.1 T j = 150 o C T j =25 o C 0 5 10 15 20 25 30 Frequency = 1 MHz Crss Coss Ciss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V DS = 10 V I DS = 0.5 A

L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 7.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Leshan Radio Company, LTD. Rev.O Dec 2015 6/7 Drain-Source On Resistance Transfer Characteristics Normalized On Resistance I D - Drain Current (A) T j - Junction Temperature (°C) V GS - Gate-Source Voltage (V) Drain-Source On Resistance Drain-Source On Resistance R DS(ON) – On Resistance (Ω) R DS(ON) – On Resistance (Ω) I D - Drain Current (A) I D - Drain Current (A) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V GS = 4.5 V V GS = 10 V R ON 10V@T j = 25 o C: 1.5 Ω R ON 4.5V@T j = 25 o C: 2.2 Ω I D = 0.5 A 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 T J = 125 O C T J = 85 O C T J = 25 O C V GS = 4.5V T J = -55 O C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 T J = 125 O C T J = 85 O C T J = 25 O C V GS = 10V T J = -55 O C 0123456 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V DS = 2V T j =125 o C T j =25 o C T j =-55 o C

L2N7002SDW1T1G, S-L2N7002SDW1T1G Small Signal MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 9.SOLDERING FOOTPRINT 1.10 --- --- 0.043 0.004 D MIN NOM MAX MIN NOM C DIM MILLIMETERS INCHES --- --- b 0.08 MAX A 0.70 0.053 1.80 0.65 BSC 0.026 BSC aaa L2 0.15 BSC E e ddd 0.10 0.00

0.006 BSC

0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 Leshan Radio Company, LTD. Rev.O Dec 2015 7/7