L2N7002KLT1G LRC | Alldatasheet

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Technical content

Features

DS(on) Surface Mount Package This is a Pb−Free Device

Applications

DC−DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. MAXIMUM RATINGS J = 25°C unless otherwise stated) Rating Symbol Value Unit Drain−to−Source Voltage V DSS V Gate−to−Source Voltage V GS ±20 V Drain Current (Note 1) Steady State T A = 25°C T A = 85°C t < 5 s T A = 25°C T A = 85°C I D 320 230 380 270 mA Power Dissipation (Note 1) Steady State t < 5 s P D 300 420 mW Pulsed Drain Current (t p = 10 /C0109s) I DM 1.5 A Operating Junction and Storage Temperature Range T J , T STG −55 to +150 Source Current (Body Diode) I S 300 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) T L 260 Gate−Source ESD Rating (HBM, Method 3015) ESD 2000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) R /C0113JA 417 °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) R /C0113JA 300 1. Surface −mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 60 V 1.8 /C0087 @ 10 V R DS(on) MAX 380 mA I D MAX (Note 1) V (BR)DSS 2.5 /C0087 @ 5.0 V L2N7002KLT1G RK RK RK Rev .A 1/5

LESHAN RADIO COMPANY, LTD. L2N7002KLT1G

ELECTRICAL CHARACTERISTICS

J = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V (BR)DSS V GS = 0 V, I D = 250 /C0109A V Drain−to−Source Breakdown Voltage Temperature Coefficient V (BR)DSS J mV/°C Zero Gate Voltage Drain Current I DSS V GS = 0 V, V DS = 60 V T J = 25°C /C0109A T J = 125°C 500 V GS = 0 V, V DS = 50 V T J = 25°C 100 nA Gate−to−Source Leakage Current I GSS V DS = 0 V, V GS = ±20 V ±10 /C0109A ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V GS(TH) V GS = V DS , I D = 250 /C0109A 1.0 2.5 V Negative Threshold Temperature Coefficient V GS(TH) J 4.0 mV/°C Drain−to−Source On Resistance R DS(on) V GS = 10 V, I D = 500 mA 1.8 /C0087 V GS = 5.0 V, I D = 50 mA 2.5 Forward Transconductance g FS V DS = 5 V, I D = 200 mA S CHARGES AND CAPACITANCES Input Capacitance C ISS V GS = 0 V, f = 1 MHz, V DS = 25 V 32.8 pF Output Capacitance C OSS 5.4 Reverse Transfer Capacitance C RSS 2.9 Total Gate Charge Q G(TOT) V GS = 4.5 V, V DS = 10 V; I D = 200 mA 0.7 nC Threshold Gate Charge Q G(TH) 0.1 Gate−to−Source Charge Q GS 0.3 Gate−to−Drain Charge Q GD 0.1 SWITCHING CHARACTERISTICS, V GS = V (Note 3) Turn−On Delay Time t d(ON) V GS = 10 V, V DD = 10 V, I D = 500 mA 9.9 ns Rise Time t r 5.0 Turn−Off Delay Time t d(OFF) 39.4 Fall Time t f 17.9 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD V GS = 0 V, I S = 115 mA T J = 25°C 1.4 V T J = 85°C 0.7 2. Pulse Test: pulse width ≤ 300 /C0109s, duty cycle ≤ 2% 3. Switching characteristics are independent of operating junction temperatures Rev .A 2/5

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERSDIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60 SOT D JK L A C B S H GV mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 LESHAN RADIO COMPANY, LTD. L2N7002KLT1G Rev .A 5/5