L2N5401 LRC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
LESHAN RADIO COMPANY, LTD. L2N5401 L2N5401-1/4 ʳʳ ʳʳ PNP Silicon Amplifier Transistors L2N5401 TO-92 ʳʳ 1 23 COLLECTOR BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N5401 Unit Collector −Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not nor- mal operating conditions) and are not valid simultaneously. If these limits are ex- ceeded, device functional operation is not implied, damage may occur and reli- ability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 °C/W 2N5401 Y = Year WW = Work Week YWW MARKING DIAGRAM
LESHAN RADIO COMPANY, LTD. L2N5401-2/4 L2N5401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 150 Vdc Collector−Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 160 Vdc Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 Vdc Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100°C) ICBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) hFE 240 Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) 0.2 0.5 Vdc Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) 1.0 1.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 100 300 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo 6.0 pF Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 200 Noise Figure (IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF 8.0 dB 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.