L2N3904

L2N3904 LRC | Alldatasheet

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LESHAN RADIO COMPANY, LTD. L2N3904 L2N3904-1/6 ʳʳ ʳʳ NPN Silicon General Purpose Transistors L2N3904 TO-92 ʳʳ 1 23 2N3904 Y = Year WW = Work Week YWW MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc Collector−Base Voltage VCBO Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RJA 200 °C/W Thermal Resistance, Junction−to−Case RJC 83.3 °C/W 1. Indicates Data in addition to JEDEC Requirements. COLLECTOR BASE EMITTER

LESHAN RADIO COMPANY, LTD. L2N3904-2/6 L2N3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Vdc Collector−Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Vdc Emitter−Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX nAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 100 300 Collector−Emitter Saturation Voltage (Note 2) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) 0.2 0.3 Vdc Base−Emitter Saturation Voltage (Note 2) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) 0.65 0.85 0.95 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 8.0 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.5 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 400 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 mhos Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) NF 5.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, td ns Rise Time (VCC

3.0 Vdc, VBE

0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc) tr ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts 200 ns Fall Time tf ns 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2%.