L1N60A LRC | Alldatasheet

Document overview

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Technical content

600V - 13 Ω - 0.8A General features 100% avalanche tested Extremely high dv/dt capability Gate charge minimized New high voltage benchmark

Description

The L1N60A is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time,low gate charge,low on-state restance.

Applications

Internal schematic diagram Type V DSS R DS(on) I D Pw L1N60A 600V <15 Ω 0.3A 3W TO-92 L1N60A LESHAN RADIO COMPANY, LTD. N-CHANNEL MOSFET

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area

Table 2. Thermal resistance

  1. When mounted on 1 inch² FR-4 board, 2 Oz Cu

Table 3. Avalanche data

Electrical characteristics

=25°C unless otherwise specified) Table 4. On/off states Table 5. Dynamic

  1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Table 8. Gate-source zener diode

DIM. mm. inch A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V5 ° 5 ° TO-92 MECHANICAL DATA LESHAN RADIO COMPANY, LTD. L1N60A