KTD2059 KISEMICONDUCTOR | Alldatasheet
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KI SEMICONDUCTOR Product Specification ee EEE EOE Silicon NPN Power Transistor KTD2059 DESCRIPTION : * Collector-Emitter Breakdown Voltage- : Vieryceo= 100V(Min) i * Collector Power Dissipation- fff PIN 1. BASE . a 2.COLLECTOR :Pc= 30W@ Tc= 2c 3. BITTER + Low Collector Saturation Voltage- 123 T0-220F package : Voe(say= 2.0V(Max)@ (lo= 4A, ls= 0.4A) + Complement to Type KTB1367 —s—i —O—4 -s- lls Sola IM" Tlettelt APPLICATIONS a . U + Designed for general purpose applications. FIO - Live A ABSOLUTE MAXIMUM RATINGS(T,=25'°C) pre pl te bd b+ 4) Jel symnor ot : K Veso . veo [coteersnaeretne | 10 | . + X . i Veo Femerouevne | 5 | . aes [_A | 14.95 [15.05 Io Collector Current-Continuous 5 A | B | 10.00 {10.10 | Ip Base Current-Continuous 0.5 A | F | 3.10 | 3.30 | ay Pe | Grecaee nm Dissipation so | w PK 3.4 [13.6 | ty Junction Temperature 150 c | a | 270 | 2.90 | LR | 2.20 | 2.40 | Tstg | Storage Temperature -55~150 | C Cu [6.40 | 6.60 _|
Kl SEMICONDUCTOR Product Specification Silicon NPN Power Transistor KTD2059
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified cme tm | enn [mr co [memimnn [owen | | fe @ hee. Classifications mle 40-80 120-240