DB201S KISEMICONDUCTOR | Alldatasheet

Document overview

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  • PDF pages: 2

Technical content

Features

  • Surface Mount Package
  • Glass Passivated Diode Construction
  • High Surge Current Capability
  • Operating Temperature: -55°C to +150°C
  • Storage Temperature: -55°C to +150°C Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current I F(AV)

2.0 A T

A = 40°C Peak Forward Surge Current I FSM 60A 8.3ms, half sine Maximum Instantaneous Forward Voltage V F 1.2V I F = 2.0A; T A = 25°C Maximum DC Reverse Current At Rated DC Blocking Voltage I R 10µA 0.5mA T J = 25°C T J = 125°C Typical Junction Capacitance C J 25pF Measured at 1.0MHz, V R =4.0V Rating For Fusing I t 14.9 A s t<8.3ms DBS Suggested Solder Pad Layout DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE C .040 .060 1.02 1.50 .047” .060” .205” .344” B CD A E G H K Notch in Case A .316 .335 8.05 8.51 B .245 .255 6.20 6.50 E .10 2 .130 2. 60 3.30 D .360 .410 9.40 10.4 G .003 .013 .076 .330 H .195 .205 5.00 5.20 K .038 .047 1.00 1.20

  • Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix designates RoHS Compliant. See ordering information) Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7
  • UL Recognized File # E165989
  • Halogen free available upon request by adding suffix "-HF"
  • Moisture Sensitivity Level 1
  • Epoxy meets UL 94 V-0 flammability rating Maximum Ratings Catalog Number Device Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage DB201S DB201S 50V 35V 50V DB202S DB202S 100V 70V 100V DB203S DB203S 200V 140V 200V DB204S DB204S 400V 280V 400V DB205S DB205S 600V 420V 600V DB206S DB206S 800V 560V 800V DB207S DB207S 1000V 700V 1000V KI SEMICONDUCTOR KI SEMICONDUCTOR

FIG.4-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD VOLTAGE,VOLTS INSTANTANEOUS FORWARD CURRENT,(A) T J =25 /g2 PULSE WIDTH:300us 2% DUTY CYCLE 0.01 0.1 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FIG.3-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,(VOLTS) CAPACITANCE(pF) 10.0 100 0.1 1.0 4.0 1.0 100 T J =25/g2,f=1MH Z FIG.5-TYPICAL REVERSE CHARACTERISTICS T J =25 /g2 T J =125 /g2 100 120 140 0.01 0.1 1.0 100 INSTANTANEOUS REVERSE CURRENT,(µA) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) BRIDGE OUTPUT FULL WAVE RECTIFIED CURRENT AVERAGE AMPERES FIG.1-DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AMBIENT TEMPERATURE ,/g2 2.0 100 150 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD NUMBER OF CYCLES AT 60H Z PEAK FORWARD SURGE CURREN T AMPERES FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 T A =25 /g2 SINGLE SINE-WAVE JEDEC METHOD S KI SEMICONDUCTOR