KTD2058 KOOCHIN | Alldatasheet
Document overview
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Technical content
KTD2058 TRANSISTOR ( NPN)
FEATURES
. Low Collector Saturation Voltage : V CE(SAT) = 1. 0V(MAX) . MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO I C=100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO I C=50mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO I E=100µA, IC=0 7 V Collector cut-off current ICBO V CB=60V, IE=0 100 µA Emitter cut-off current IEBO V EB=7V, IC=0 100 µA DC current gain hFE V CE=5V, IC=0.5A 60 200 Collector-emitter saturation voltage VCE(sat) I C=2A, IB=0.2A 1 V Base-emitter voltage VBE(on) V CE=5V, IC=0.5A 1 V Transition frequency fT V CE=5V, IC=0.5A 3 MHz Collector output capacitance Cob V CB=10V, IE=0, f=1MHz 35 pF Turn-on Time ton 0.65 Storage Time tstg 1.3 Switching time Fall Time tf 0.65 us CLASSIFICATION OF h FE Rank O Y Range 60-120 100-200 TO-220 1. B A S E 2. COLLECTOTR 3. EMITTER
Typical Characteristics KTD2058