KTD1351 JIANGSU | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors KTD1351 TRANSISTOR (NPN)
FEATURES
APPLICATIONS
z General Purpose Applications MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =50mA,I B =0 60 V Emitter-base breakdown voltage V (BR)EBO I E =100µA,I C =0 7 V Collector cut-off current I CBO V CB =60V,I E =0 0.1 mA Emitter cut-off current I EBO V EB =7V,I C =0 0.1 mA DC current gain h FE V CE =5V, I C =0.5A 60 300 Collector-emitter saturation voltage V CE(sat) I C =2A,I B =0.2A 1 V Base-emitter voltage V BE V CE =5V, I C =0.5A 1 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 35 pF Transition frequency f T V CE =5V,I C =0.5A
3 MHz
RANGE 60-120 100-200 150-300 Symbol Parameter Value Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 7 V I C Collector Current 3 A P C Collector Power Dissipation 2 W R θJA Thermal Resistance From Junction To Ambient 63 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 B,Nov,2014
www.cj-elec.com 2 B,Nov,2014 Min Max Min Max A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 Φ 3.735 3.935 0.147 0.155 Symbol Dimensions In Millimeters Dimensions In Inches 0.100 TYP2.540 TYP