KSR2001 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC yye 9 | 7964142 0007087? I T+ 37-13 KSR2001 PNP EPITAXIAL SILICON TRANSISTOR ee SWITCHING APPLICATION (Bias Resistor Built In) ‘ ‘* Switching circuit, Inverter, Interface ‘circuit Driver circult TO-92 * Bullt in bias Resistor (R,=4.7K0, R,=4.7KQ) * Complement to KSR1001 . ABSOLUTE MAXIMUM RATINGS (T.=25°C) Lr Collector-Base Voltage Veso, ~50 v nm . Collector-Emitter Voltage Veeo. -50 v Emitter-Base Voltage Vewo -10 v ‘ Collector Current le ~100 mA Collector Dissipation Po 300 mW Junction Temperature ah 150 °c Storage Temperature Tstg -55~150 | °C . 1. Emir 2. Colecter a. Base 3 | ELECTRICAL CHARACTERISTICS (T,=25°C) , [esses [even | vorcoaton [am [tw [ome [ow] Collector-Base Breakdown Voltage | BVceo Ic=—10pA, le=O 50 v Collector-Emitter Breakdown Voltage | BVcco lo=—100pA, Ip=0 -50 v Collector Cutoff Current leeo Vea=—40V, le=0 -0.1 BA DC Current Gain . hee Vee=~5V, Io=—10mA 20 Collector-Emitter Saturation Voitage | Vce(sat) | lc=—10mA, Is=—0.5mA . 0.3 v Current Gain-Bandwidth Product fr Vee=~SmA, le —10V 200 MHz Output Capacitance Cob Vea=—10V, le=O . 6.5 pF f=1.0MHz . Input Off Voltage Vi(off) Vee=—5V, Io=—100pA -0.5 v Input On Voltage Vion) Vee=—0.3V, loe=—20mA -3 v Input Resistor Ry 3.2 47 6.2 Ko Resistor Ratio Ry/Re 0.9 .1 Ww Equivalent Circuit Cotector (Output) . . Base (input Rp . Emitter (Gnd) & SAMSUNG SEMICONDUCTOR 387
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