KSR1205 SAMSUNG | Alldatasheet
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- _ EEE {SAMSUNG SEMICONDUCTOR INC'F-35-114E D | 29b4R42 0007071 .3 | KSR1205 NPN EPITAXIAL SILICON TRANSISTOR eS SWITCHING APPLICATION (Bias Resistor Built In) * ‘+ Switching Circult, Inverter, Interface clrcult TO-028 Driver clreult * Bullt In bias Resistor (R,=4.7KQ, R,= 10K) : * Complement to KSR2205 ABSOLUTE MAXIMUM RATINGS (T,=25°C) . Collector-Base Voltage Vee 50 v t f . Collector-Emitter Voltage Veeo. 50 v Emitter-Base Voltage Vevo 10 v Collactor Current le 100 mA Collector Dissipation Po 300 mw : Junction Temperature Ti 160 °C Storage Temperature Tstg -85~150 | °C + 4. emiter 2. Collector 3. Base 3 | _ ELECTRICAL CHARACTERISTICS (T,=25°C) |__eraretoate [sym [ent conaton [im [oe [mex [unt | Collector-Base Breakdown Voltage BVceo g=10pA, le=0 50 v Collector-Emitter Breakdown Voltage | BVceo | = 100yA, ly=0 60 v Collector Cutoff Current leo0 Veo=40V, le=O O14 | yA . DC Current Gain be Vce=5V, Ie=5mA 30 Collector-Emitter Saturation Voltage | Vce(sat) | o=10mA, lp=0.5mA og | v Output Capacitance Cob | Vea=10V, t=O 37 pF |” 1=1MHz ‘Current Gain-Bandwidth Product tr Vee=10V, lo=SmA 250 MHz Input Off Voltage Vifott) | Vce=5V, lo= 100uA 0.3 v Input On Voltage Vion) | Vce=0.3V, le=20mA 26] Vv Input Resistor Ry 32 | 47 | 62] Ko Resistor Ratio RYRe 0.42 | 047 | 0.52 . Equivalent Circult ° ‘Cotector (Output a ‘Base tepsto— : Erte (Gna) & SAMSUNG SEMICONDUCTOR 344
{SAMSUNG SEMICONOUCTOR INC F38-24e 0 ff 26442 oooz072 s KSR1205-: . NPN EPITAXIAL SILICON TRANSISTOR alee SO REE INPUT ON VOLTAGE ‘ ‘DC CURRENT GAIN: 0 1000 Serr =H SE aailimniipens pC EU ICIu ee ¢ OUI eT) LUI TNT {SSS ae SaSeer i eeeesitiiomeecrity os EEE tH J SaaS . Sails aeillliammiiil ‘CHIME REI AH etn rnc CCCP CE CU 3 \\ wo ases rr to 80 00 a CC dnt COLLECTOR CURRENT umd cOULECTOR cunmeNT . INPUT OFF VOLTAGE POWER DERATING . ee a SS ee “ Pees eee 800 —— rr i ot i “TTY LLELL | epee FCO NCCELO ' 2S See i ST tALLL_LEI . CETTE TT tT | ; . Wrasee eee eT a ee eT R0 WioFFIn wr OFF VOLTAGE 140, ANB TEMPERATURE | ee | BE sausunc SEMICONDUCTOR : _ 8a