KSR1202 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC-7-35./J14E 0 i 7964142 coo70bS 6 Bf KSR1202 : NPN EPITAXIAL SILICON TRANSISTOR LT SWITCHING APPLICATION (Bias Resistor Built In) * Switching circuit, Inverter, Interface circuit Driver circuit TO-28 © Built in bias Resistor (R,=10K9, R,=10K2) * Complement to KSR2202 “ae ABSOLUTE MAXIMUM RATINGS (T, =25°C) Les Characteristic Symbol } Rating | uni | Y . Collector-Base Voltage Veeo 50 | Vv ¢ . Collector-Emitter Voltage Veto 50 v Emitter-Base Voltage Veo 10 v | Collector Current Ie 100 mA Collector Dissipation Pc | 300 mW Junction Temperature i Tj L 150 °C . Storage Temperature . Tstg } -55~150 °c - 1. Emilter 2. Collector 3, Base 3 | ELECTRICAL CHARACTERISTICS (T.a=25°C) , . Characteristic | Symbot | Test Condition Min | tye | max | unit | Collector-Base Breakdown Voltage BVceo tc=10pA, le=0 50 Vv Collector-Emitter Breakdown Voltage | BVcco: Ic=100yA, Ip=O0 50 Vv Collector Cutoff Current Iceo Vea=40V, le=O0 01 pA DC Current Gain Dre Vce=5V, Io=5mA 30 Collector-Emitter Saturation Voltage | Vce(sat) | lc=10mA, !p=0.5mA 0.3 Vv Current Gain-Bandwidth Product fr Vece=5mA, Ic=10V * 250 MHz Output Capacitance Cob Ves=10V, te=O 3.7 pF Hi t=1.0MHz Input Off Voltage Viloff) Vee=5V, Ic=100pA 0.5 : Vv Input On Voltage Vi(on) Vee=0.3V, lo=10mA™ 3 v Input Resistor Ri 7 10 13 Ka Resistor Ratio Ry/Re 0.9 1 VW Equivalent Circuit . N : oe Collector (Output) R, ° Base (Input) . a, : . Emitter (Gnd) . . . a & SAMSUNG SEMICONDUCTOR 835
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