KSR1201 SAMSUNG | Alldatasheet
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“SAMSUNG SEMICONDUCTOR INC T-25-I) LYE 0 Peacu.s2 ooo70n3 4 ff KSR1201 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) 7 © Switching cireult, Inverter, Interface circuit Driver circuit TO-828 . © Built in bias Resistor (R,=4.7KQ, R,=4.7KM) . * Complement to KSR2201 - ABSOLUTE MAXIMUM RATINGS (T.=25°C) rien Collector-Base Voltage Veso 50 vi Collector-Emitter Voltage Veeo 50 vii : : . Emitter-Base Voltage Veso 10 vii Collector Current le 100 mA | Collector Dissipation Po 300 mw } Junction Temperature W 10 06} ec ' Storage Temperature Tstg -85~150 | °C | : 1. Smiter 2, Cotecter 3. Base 3 | ELECTRICAL CHARACTERISTICS (T, =25°C) ! Collector-Base Breakdown Voltage | BVceo Ic=10pA le=0 50 Vv * Collector-Emitter Breakdown Voltage | BVcco | lo=100uA, In=0 50 v | Collector Cut6tf Current leso Veo=40V, fe=0 01 | yA | OC Current Gain tre Vce=5V, lo=10mA 20 | Collector-Emitter Saturation Voltage | Vce(sat) | Ic=10mA, ls=0.5mA. 0.3 v ! Current Gain-Bandwidth Product | fr Vee=5mA, lo=10V 260 MHz | Output Capacitance Cob Vea=10V, le=0 3.7 pF f=1.0MHz | Input Off Voltage Vilott) | Vee=SV, fe= 100HA 0.5 v | Input On Voltage Viton) | Vce=0.3V, le=20mA 3 v Input Resistor R, 32 | 47 | 62 | Ko Resistor Ratio R/Re 0.9 1 WwW Equivalent Circuit Collector (Output A Base (Input) © . Lt ‘Emitter (Grd) & SAMSUNG SEMICONDUCTOR + 333
;SAMSUNG SEMICONDUCTOR . INC F35-J LYE D Bescsru2 0007064 & I KSR1201 NPN EPITAXIAL SILICON TRANSISTOR . InPUT ON VOLTAGE DC CURRENT GAIN” oF EH Co PUL CN CTT ; LOGIT «=f ESS , ee eee ee aaat ATT CERT CIN TTT TET ’ o30s 1 as 0 30 50 100 1 36 10 30 60 100 300 600 1000 ‘cimah COLLECTOR CURMENT IdmA) COLLECTOR CURRENT ws ove | POWER DERATING SR ee eee esses |g LE JERSE SCA PPP rer i PTX EET BLE CN *CECCOCELLEEee wt TEA TT I A CNP c a 1. a 20 ° 2 80) 7S (100 128180175 200 VAOFF) (V) INPUT OFF VOLTAGE T°0) AMBIENT TEMPERATURE eB sausuna SEMICONDUCTOR . 334