KSR1111 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONOUCTOR INC F35-\\J14e 0 ff 7ae4n42 oooz0ss 2 KSR1111 ; NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) - ‘* Switching Circuit, Inverter, Interface circuit ‘SOT-23 . Driver circult . * Built in bias Resistor (R=22K0) . * Complement to KSR2111 ABSOLUTE MAXIMUM RATINGS (T,=25°C) re Vee Collector-Base Voltage Veoo 40 v S ns Collector-Emitter Voltage Veeo 40 vt Emitter-Base Voltage Vewo 5. Vv Collector Current le 100 mA Collector Dissipation Pe 200 mw Junction Temperature Tj 150 me Storage Temperature Tstg ~55~150 | °C 1. ase 2, Emer 2, Cotector | | ELECTRICAL CHARACTERISTICS (T. =25°C) . . Collector-Base Breakdown Voltage BV ceo Ie=100pA, le=0 40 v Emitter-Emitter Breakdown Voltage BVceo Ie=1mA, t=O 40 v Collector Cutoff Current feso Vee=30V, le=O 0.1 HA DC Current Gain Dre Vee=5V, lo 1mA 100 600 . Coliector-Emitter Saturation Voltage | Vce(sat) | b= 10mA, la=1mA 0.3 v Output Capacitance Cob Vea 10V, le O 37 pF f=1MHz Current Gain-Bandwidth Product tr Vee™ 10V, b= 5mA 260 MHz input Resistor R 16 22 29 ka Equivalent Circuit Marking cote YO = W [Rat . Base tmp J i : H es Emir (God) 88 samsuna SEMICONDUCTOR 329