KSR1106 SAMSUNG | Alldatasheet
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"SAMSUNG SEMICONOUCTOR INC J-25.[\\L4E 0 eseunue goo7049°T a | KSR1106 NPN EPITAXIAL SILICON TRANSISTOR NS SWITCHING APPLICATION (Bias Resistor Built in) 7 * Switching Circuit, Inverter, Interface circuit sotes Driver circuit * Bullt in blas Resistor (R,=10K, R,=47KN) . ‘* Complement to KSR2106 - + ABSOLUTE MAXIMUM RATINGS (T,=25°C) ree re, Collector Base Voltage Veeo 50 v ? . Collector-Emitter Voltage Vero 60 Vv Emitter-Base Voltage Veso 10 Vv Collector Current le 100 mA Collector Dissipation Po 200 mw | Junction Temperature TF 150 °c . | Storage Temperature Tstg -55~150 | °C 1. Base 2. Eniter 3. Gotecter re | ELECTRICAL CHARACTERISTICS (T,=25°C) Collector-Base Breakdown Voltage | BVcco | lo= 10yA, le=0 50 v Collector-Emitter Breakdown Voltage | BVcco | lc= 100A, le=O 50 v Collector Cutoff Current leso Vca™40V, te=0 0.1 | yA DC Current Gain bre Vee=5V, lo=5mA 68 Collector-Emitter Saturation Voltage | Vce(sat) | Io=10mA, lp=0.5mA o3 | v Output Capacitance Cob Vca™10V, le=0 3.7 pF f=1MHz Current Gain-Bandwidth Product fr Vee=10V, lo=SmA 260 ‘MHz Input Off Voltage Vilott) | Voe=SV, lo=100uA 0.3 v Input On Voltage Vion) | Vce=0.3V, lo= 1mA 14] ov Input Resistor Ry 7 | 10 13 | Ko Resistor Ratio Ri/Re 0.19 | 0.21 | 024 Equivalent Circuit Marking Cotector (Output fa Basa trput ry Cc Cc Emitter (Gd) AH SAMSUNG SEMICONDUCTOR aia:
"SAMSUNG SEMICONDUCTOR . INC F-35-)p LHE D | karen oo070S0 6 I KSR1106 NPN EPITAXIAL SILICON TRANSISTOR —a_—E_a le ee (PUT ON VOLTAGE ‘De CURRENT GAIN’ Se ce os ee Sc oe . UM Cee CI ATTIC HHH HEH Eel “EET EHHIE FH mc via, coutcen cect sin couscon cna weuT or voLTAGE nie SSeS SOT TT Mone eneeee eee fe========== ee aeteeccees SaNGEEEEE == 5===>—== eee Se EAE _VAOFRAM, INPUT OFF VOLTAGE TA*C, AMBIENT TEMPERATURE & SAMSUNG SEMICONDUCTOR 320