KSR1104 SAMSUNG | Alldatasheet
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_ SAMSUNG - SEMICONDUCTOR INC LYE O Bp racuvse goo7o4s 2 | KSR1104- - NPN EPITAXIAL SILICON TRANSISTOR NEN SWITCHING APPLICATION (Bias Resistor Bullt In) f ‘* Switching Circut, Inverter, Interface circult Driver circuit - © Built in bias Resistor (R,=47K0, R= 47K) sor-23 * Complement to KSR2104 . ABSOLUTE MAXIMUM RATINGS (T.=25°C) Collector-Base Voltage Veso 50 v . . Collector-Emitter Voltage Veeo 50 v Emitter-Base Voltage Veoo 10 v ro Collector Current le 100 mA : Collector Dissipation Po 200 mw Junction Temperature Ti 150 °C Storage Temperature Tstg ~85~150 | °C ee | F ELECTRICAL CHARACTERISTICS (T,=25°C) [eens [oman | vn coanon [on [om [ wr [ ot | Collector-Base Breakdown Voltage | BVceo | lc=10pA, le=0 60 v Collector-Emitter Breakdown Voltage | BVceo | f= 100pA, le=O 50 v Collector Cutoff Current ‘eso Vca™=40V, le=0 yA DC Current Gain bre Vee=5V, lo=SmA 68 Collector-Emitter Saturation Voltage | Vce(sat) | l= 10mA, ly=0.5mA v ’ Current Galn-Bendwidth Product | fr Vce=5mA, lo=10V 250 MHz Output Capacitance Cob Vea 10V, le=0 : 3.7 pF t=1,0MHz Input Off Voltage Vi(ott) | Vee=8V, lo= 1 00uA 0.6 v Input On Voltage Vifon) | Vces0.3V, lo 5mA v Input Resistor Ry . 32 a7 Ka _ | Resistor Ratio Ri/Re 0.9 1 . Equivalent Circult - Marking ‘Cotecter(Outout = FA * | {00 (inp : J : fn rs ss : Emitter (Gnd) : & SAMSUNG SEMICONDUCTOR ond
‘SAMSUNG SEMICONDUCTOR. INC T-3S-l|a4e 0 B7eu42 coo7o¥e 4 KSR1104 - NPN EPITAXIAL SILICON TRANSISTOR ORT106 NPN EPITAXIAL SILICON TRANSISTOR WWPUT ON VOLTAGE DCCURRENTGAIN =~ SSHRC = SECS SE } EME g Bane ania 1 OSE ea Fo HE. 9) 11 a CRT CTITNE TATU nur co peace evr ort vrs vom or mL SESS yf |} | td Pe a! OG | Ha (| ft] tf ty CPT yr yyy ro0 MCN LEA LL CAKE pp Socae fc aeaae ee eee ; PSEREHA HEE N * N Cece ccc IELIN TET : . ° VAOFF)(W) INPUT OFF VOLTAGE. ‘Td*C), AMBIENT TEMPERATURE. & SAMSUNG SEMICONDUCTOR 316