KSR1102 SAMSUNG | Alldatasheet
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-SAMSUNG SEMICONDUCTOR INC F-35411 14E— D | a ooo?7041 § I : KSR1102 . NPN EPITAXIAL SILICON TRANSISTOR ——— SWITCHING ‘APPLICATION (Bias Resistor Built In) . : * Switching Circult, Inverter, Interface circuit S . Driver circuit sora * Bullt in blas Resistor (R,=10K0, R,=10KQ) ' . * Complement to KSR2102 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Collector-Base Voltage Vee 50 vo if ai. ey Collector-Emitter Voltage Vero 50 Vv sy Emitter-Base Voltage Ves0 10 v ; Collector Current le 100 mA Collector Dissipation Po 200 mw Junction Temperature Ti 150 “Cc Storage Temperature Tstg | -55~150 | °C ELECTRICAL CHARACTERISTICS (T.=25°C) [ace Yom [aon [on [ie [wr [om Collector-Base Breakdown Voltage | BVcoo | lc=10yA, te==0 50 v Collector-Emitter Breakdown Voltage | BVceo | lo= 100A, lp=0 50 v Collector Cutoff Current leo Veo™40V, le=0 HA DC Current Gain hee Vee=5V, lo=5mA 20 Collector-Emitter Saturation Voltage | Vce(sat) | lo=10mA, l=0.6mA . v Current Gain-Bandwidth Product | fr Vece=5mA, lo=10V 250 MHz Output Capacitance ‘Cob Vce=10V, le=O 37 pF on f=1,0MHz Input Off Voltage Viloff) Vee=5V, lo= 100pA’ 0.5 v Input On Voltage Vion) | Vee=0.3V, lo=10mA v Input Resistor Ry 7 10 Ka Resistor Ratio RulRe . 0.9 1 Equivatent Circuit Marking \\cotector (Outen) = m1 | Ro | ase (input J CI CS oy Emitior (Gane) —S— See & SAMSUNG SEMICONDUCTOR ait
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