KSR1101 SAMSUNG | Alldatasheet
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‘ : SAMSUNG SEMICONDUCTOR. INC LYE D Jrsesae2 0007039 °? | KSR1101 NPN EPITAXIAL SILICON TRANSISTOR ean “T-35-1\\ . SWITCHING APPLICATION (Bias Resistor Built In) “ ‘© Switching Circuit, Inverter, Interface circuit SOT-23 Driver circult . * Bullt In bias Resistor (R,=4.7K9 R,=4.7K2) * Complement to KSR2101 ABSOLUTE MAXIMUM RATINGS (T,=25°C), } Collector-Base Voltage Veeo 50 v > . } Collector-Emitter Voltage Veeco 60 Vv : i Emitter-Base Voltage Veso 10 v : Collector Currént Ie 100 mA . i Collector Dissipation Po 200 mw ; Junction Temperature Ti 150 °C } Storage Temperature Tstg -85~150 | °C 4, Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T,=25°C) | Collector-Base Breakdown Voltage [BVcoo | l= 10yA, Ie 60 v Collector-Emitter Breakdown Voltage | 8Vceo | lc= 100uA, la=0 50 v Collector Cutoff Current fea Vea=40V, le=0 0.1 vA DC Current Gain Dee Voe=5V, lo=10mA 20 | Coltector-Emitter Saturation Voltage | Vce(sat) | Ic=10mA, lb=0.5mA 0.3 v | Current Gain-Bandwidth Product fr Vce=5mA, lo=10V 250 MHz Output Capacitance Cob Ves=10V, le=0 3.7 pF f=1.0MHz Input Off Voltage Vi(ott) | Vee=5V, lo=100pA 0.5 v Input On Voltage Vion) | Vce=0.3V, le=20MA 3 v Input Resistor Ri 3.2 47 6.2 Ko Resistor Ratio Ry/Re 0.9 1 aw Equivalent Circuit ‘Collector (Outpul), Marking | jo one on vr, H 8 Emitter (Grd) & SAMSUNG SEMICONDUCTOR . 309
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