KSR1011 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC TBS 4pHE Oo | 7964142 0007035 T I KSR1011 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) * Switching Circult, Inverter, Interface circuit To-92 Driver circuit ~ * Built in bias Resistor (R=22K2) ‘* Complement to KSR2011 ° ABSOLUTE MAXIMUM RATINGS (T,=25°C) ics | Characteristic [ symbot | ating | Unit A Tig * Collector-Base Voltage Veoo 40 vii F ! Collector-Emitter Voltage Veco 40 vf * Emitter-Base Voltage Vio; 5 vi { Collector Current le ; 100 m | Collector Dissipation Po 300 | mw ft * Junction Temperature Ti 150 | ec } + Storage Temperature Tstg * -55~150 | °C I 1. Emitter 2. Cottactor 3. Beso i | ELECTRICAL CHARACTERISTICS (T.=25°C) Paes Yes [seen [or [oe [0 Collector-Base Breakdown Voltage | BVcso | lo 100yA, le=0 40 | - v Emitter-Emitter Breakdown Voltage | B8Vceo | le=1mA, la=0 40 v Collector Cutoff Current teoo Veo=30V, te=0 ot | uA DC Current Gain hee Vee=5V, lo=1mA 100 600 Collector-Emitter Saturation Voltage | Vce(sat) | lo=10mA, lo=1mA o3 | v Output Capacitance Cob Vep= 10V, le=O 37 pF f=1MHz Current Gain-Bandwidth Product | fr Vee=10V, lo=5mA 260 MHz Input Resistor R 16 22 | 29 | Ka Equivalent Circuit . ‘Coltector (Output) . . . Base input . Emitter (Grd) rH SAMSUNG SEMICONDUCTOR 305