KSR1010 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INCT=35-/}14E 0 | 7964142 0007033 & I , : KSR1010 NPN EPITAXIAL SILICON TRANSISTOR NY SWITCHING APPLICATION (Bias Resistor Built In) * * Switching Circult, Inverter, Interface circuit To0.92 Driver circuit * Built in bias Resistor (R=10K) - * Complement to KSR2010 L ° LD) ABSOLUTE MAXIMUM RATINGS (T,=25°C) Se ta H Characteristic | symbot | Rating § Unit! LE ' Cotlector-Base Voltage b Veo + 40 5 V ‘ , . | Collector-Emitter Voltage Veco | 40 v | Emitter-Base Voltage | Vee 5 v + Collector Current fle 100 mA Collector Dissipation b Po i 300 mw * Junction Temperature i 7 150 °c # Storage Temperature ; Tig = -85-150 °C $. Radler 2, Colector ®. fase E ELECTRICAL CHARACTERISTICS (T,=25°C) [eee [min [ econ [om [ww [ wor [om Collector-Base Breakdown Voltage BV cso. Io=100pA, le=O 40 v Emitter-Emitter Breakdown Voltage BVceo le=1mA, ip=O 40 Vv Collector Cutoff Current lea Ves=30V, =O 0.1 pA DC Current Gain be Vee=SV, lo=1mA 100 600 Collector-Emitter Saturation Voltage | Verlsat)_ | le=10mA, le=1mA | 0.3 v Output Capacitance Cob | Vea=10V, le=0 37 oF t=1MHz Current Gain-Bandwidth Product fr Vee=10V, =5mA 260 MHz Input Resistor R 7 10 | 13 | Ka Equivalent Circuit Collector (Output) . . R Base (input : : Emiter (Goo) : & SAMSUNG SEMICONDUCTOR 303
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