KSR1008 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC 7T-36-) 14E 0 J 7964242 ooOZGe7 4 Bf KSR1008 NPN EPITAXIAL SILICON TRANSISTOR . ——— SWITCHING APPLICATION (Glas Resistor Built in) : * Switching circult, inverter, Interface circuit Driver circuit 10-92 . © Bullt In blas Resistor (R,=47K2, R:=22KN) * Complement to KSR2008 . ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Ce Collector-Base Voltage Veo” 50 v Z ‘ . Collector-Emitter Voltage Veeo 50 v § Emitter-Base Voltage Veo 10 v Collector Current Ic 100 mA . Collector Dissipation Po 300 mw Junction Temperature T 150 °c Storage Temperature Tsto . ~55~150 °c 1. Enter 2. Colter 9. base Fs | ELECTRICAL CHARACTERISTICS (T, =25°C) Cd Collector-Base Breakdown Voltage | 8Vcao | le= 10uA, le=O 50 v . Collector-Emitter Breakdown Voltage | BVceo Ic=100pA, Ie=O 50 Vv Collector Cutoff Current leoo Vea™40V, le=0 01 pA DC Current Gain Dre Voce=5V, lo SmA 66 . Collector-Emitter Saturation Voltage | Vce(sat) | lc 10mA, la=0.6mA . 0.3 v ‘Current Gain-Bandwidth Product tr Vee=5mA, lo=10V 260 MHz Output Capacitance Cob Ves™10V, le=O 37 pF f=1.0MHz Input Off Voltage Vuotf) Vee 5V, lo 100nA 08 Vv Input On Voltage vilon) | Vee™0.3V, lom2mA 4|oyv Input Resistor Ry 32 47 62 Ko Resistor Ratio RVR 1.8 24 24 Equivalent Circult . Coltector (Output) fn. sabe tops . Emitter (Gnd) ———— eee & SAMSUNG SEMICONDUCTOR 299
SAMSUNG SEMICONDUCTOR INC FSS) wwe o Pp rse4zy2 ooozozo o ff KSR1008 NPN EPITAXIAL SILICON TRANSISTOR INPUT ON VOLTAGE 0c CURRENT aay pee St ate eel Sc See CE TT aa ae mat 1 ee TY 3 EARTH fH EA Ce CET TT an bl IefmA) COLLECTOR CURRENT INPUT OFF VOLTAGE Ts =o poHeeeseeees pat TT a SEEEEERREEEPF ECA : e FEAT 4 “| NEL Por) yt scEREPEReSSS PLL TN TET “CECE at tT EK TE VAOFF) {¥) INPUT OFF VOLTAGE TA*C) AMBIENT TEMPERATURE : & SAMSUNG SEMICONDUCTOR 300