KSR1007 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC T-35-\\\\hue 0 ff 74242 oOOZOa7 Oo KSR1007 _ NPN EPITAXIAL SILICON TRANSISTOR EC SWITCHING APPLICATION (Bias Resistor Bullt in) * Switching Circult, Inverter, Interface circult To-92 Driver circult * Built in bias Resistor (R,=22K0, R,=47KQ) . . . * Compiement to KSR2007 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Sey Cheracteristic [ symbot | Rating | unit | LE ; Collector-Base Voltage Veoo 50 vi F . Collector-Emitter Voltage Veso 50 v | Emitter-Base Voltage Veoo wo; vot Collector Current Io 100 ; MA i Collector Dissipation Po 300 mw | - . Junction Temperature Ti 150 °c: | Storage Temperature Tstg -55-150 °c 1. Emitter 2. Cofactor 3. Bese 3 | ELECTRICAL CHARACTERISTICS (T,=25°C) [—ereassne [one [vor eonon [oo [Tw [ mr [om ‘Collector-Base Breakdown Voltage BV ceo, Ic=10pA, le=0 60 Vv Collector-Emitter Breakdown Voltage | BVceo Ic=100pA, la=O 50 Vv Collector Cutoff Current leoo Veo=40V, le=O . 04 A DC Current Gain Dre Vee=5V, lo=5mA 68 Collector-Emitter Saturation Voltage | Vce(sat) | l= 10mA, Ip=0.5mA 0.3 v Output Capacitance: Cob Vea=10V, le=O 37 pF t= 1MHz . Current Gain-Bandwidth Product fr Voe=5mA, lo=10V 250 MHz Input Off Voltage ‘Vi(off) Voe™5V, Io 100HA 0.4 Vv Input On Voltage Viton) Vee=0.3V, lo=2mA 2.56 v Input Resistor Ry 16 22 29 ko Resistor Ratio . R/Re 0.42 0.47 0.62 Equivalent Circuit : Cotector (Output . n ase tot . Emir (Gn ——SSSSeSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSsSSSses & SAMSUNG SEMICONDUCTOR 297
-SAMSUNG SEMICONDUCTOR INCT-35-)) LYE 0 | Racer ooo?028 2 | KSR1007 NPN EPITAXIAL SILICON TRANSISTOR ASRI007 CNP EPITAXIAL SILICON TRANSISTOR INPUT ON VOLTAGE. 7 DC CURRENT GAIN ‘ fal oti ill meee ee s= FREE wo ES HHT i Cr Eee Cet i Sd a ceil | pa ee ea | ° SSS Sti fet Stal Sh oC LE AT i ion Ball HH H CEE ELT EEF SSS—e5 TIC mE Ee eee ETAT TLE] [-SSS Se SSSS im we CUS} Et TAT ETT ‘ 2S Sees PTTN TLL “CEEEEREFRR ESCORT gE) ob ( pepe EAH a 58 samsunc SEMICONDUCTOR 298