KSR1006 SAMSUNG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
[SAMSUNG SEMICONDUCTOR INC }-35-[\\L4e 0 J ea64142 ooOz0es 7 i KSR1006 NPN EPITAXIAL SILICON TRANSISTOR ——— SWITCHING APPLICATION (Bias Resistor Built in) “ + Switching Circuit, Inverter, Interface circult 10-92 Driver circult * Bullt in bias Resistor (R,=10KN, Ry=47KQ) ‘* Complement to KSR2006 ABSOLUTE MAXIMUM RATINGS (T, =25°C) P 2 er Collector-Base Voltage Veoo 50 v . Collector-Emitter Voltage’ Vero 50 v ‘ Emitter-Base Voltage Veso 10 v . Collector Current Ie 100 mA Collector Dissipation Po 300 mw .- Junction Temperature Ti 150 | °c Storage Temperature Tstg 755-150 | ct 1. Emiter 2. Cofecter 3. Base 3 | ELECTRICAL CHARACTERISTICS (T,=25°C) . [eres [em [ To non [wn | tr [om [ om Collector-Base Breakdown Voltage BVcso Ic=10pA, le=O 50 v Collector-Emitter Breakdown Voltage | BVcco. 1c=100pA, la=O 50 Vv Collector Cutoff Current leo Veo" 40V, le=0 - 01 | yA DC Current Gain re Vce=5V, lo=5mA 68 Collector-Emitter Saturation Voltage | Vce(sat) | Ic=10mA, le=0.5mA os} v Output Capacitance Cob | Veo= 10V, le=0 37 pF | f=1MHz Current Gain-Bandwidth Product fr Vce=10V, le=5mA 250 MHz Input Off Voltage Viloff) Vee=5V, ic= 100nA 0.3 Jv Input On Voltage Vifon) | Vce=0.3V, lo=1mA 14] Vv Input Resistor Ry 7 | 10 13 | Ka Resistor Ratio Rule 0.19 | 0.21 | 0.24 Equivalent Circuit . catector (Output : Base ¢nput : : a mites (Gr) & SAMSUNG SEMICONDUCTOR 295
SAMSUNG SEMICONDUCTOR Inc PSSHR4E 0 PP zae4z42 ooozoa, 9 KSR1006 NPN EPITAXIAL SILICON TRANSISTOR eR eee INPUT ON VOLTAGE DC CURRENT GAIN’ 10 100 a == EHHH Beare fi onl TH omer : COMET, COME Tin Gerace “HE ¢ LUMI er) A7-ai i o “FH all ai EHH Pell ell EE ET oo ec courron etn nt courron cient wer or women eee ; Ss == SSS SaaS “ 0. BEEZ ERE] HAH a tee (Ge: ==-=--- 0 Caen soft ot +h eageeeeess PONT jeff +H NEE SS SaaS | N vee wet er voce 10 Ament arnt a & SAMSUNG SEMICONDUCTOR 296