KSR1005 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC J-35-{JL4e 0 ff 7964142 coo70a3.3 I KSR1005 NPN EPITAXIAL SILICON TRANSISTOR Ee SWITCHING APPLICATION (Bias Resistor Built in) £ : * Switching Circuit, Inverter, Interface circuit 0-92 Driver clreult * Built In blas Resistor (R,=4.7K0, A,=10K0) . * Complement to KSR2005 LEA ABSOLUTE MAXIMUM RATINGS (T,=25°C) Soe Collector-Base Voltage Veoo 50 v . Collector-Emitter Voltage Vee, 50 v " Emitter-Base Voltage evo io [ov . Collector Current kc 100 . mA Collector Dissipation Po 300 mw Junction Temperature Tq 150 °c Storage Temperature Tstg -55~150 aed 1. punter 2, Cofactor, Base | 3 | ELECTRICAL CHARACTERISTICS (T,=25°C) [acne Joes] semi m [ [e [om] Collector-Base Breakdown Voltage BV ceo. Ic=10pA, le=O0 50 Vv Collector-Emitter Breakdown Voltage | BVceo Ic=100pA, le=O 50 v Collector Cutoff Current Ico Ves=40V, le=O0 0.4 pA DC Current Gain Dre Vee™5V, le=SmA 30 Collector-Emitter Saturation Voltage _| Vce(sat) | lb=10MA, l=0.5mA . 0.3 Vv Output Capacitance ‘Cob Ves™= 10V, le=O 3.7 pF - f=1MHz Current Gain-Bandwidth Product fr Voe=10V, Io=5mA 260 MHz Input Off Voltage Vi(off) Voe=6V, le=100pA 03 . Vv Input On Voltage Vi(on) Voe=0.3V, le=20mA, 25 v Input Resistor Ri 32 47 6.2 Ka Resistor Ratio Rule 0.42 | 047 | 0.52 Equivalent Circuit . . cotectr ftp : a 130 (nou) mite (Gnd SSO €88 sawsunc SEMICONDUCTOR . 293
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