KSR1004 SAMSUNG | Alldatasheet
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! SAMSUNG SEMICONDUCTOR . INC T2H L4E DO | 29b4L4e ooo70eL T | KSR1004 i. NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) « Switching clrcult, Inverter, Interface circuit Driver circult 0-92 © Built in bias Resistor(R,=47K9, R,=47K0) * Complement to KSR2004 ABSOLUTE MAXIMUM RATINGS (T, =25°C) Coltector-Base Voltage Veco | 50 v p Collector-Emitter Voltage Veeo 50 v . Emitter-Base Voltage Veso 10 v . Collector Current le 100, mA Collector Dissipation Po 300 mw Junction Temperature 7 150, ne __ | Storage Temperature Tstg -85-150 | °C 1. Eniter 2. Colector 3, Base 3] ELECTRICAL CHARACTERISTICS (T, =25°C) [—eacsie [on [To eonon [wn [ [wr [om Collector-Base Breakdown Voltage | BVcso | l= 10HA, le=0 50 v Collector-Emitter Breakdown Voltage | BVceo. Ic=100pA, lp=O 50 v Collector Cutoff Current © | beso Veo=40V, te=0 on BA DC Current Gain bre Vee=SV, lo=5mA 68 Collector-Emitter Saturation Voltage | Vce(sat) | c= 10mA, le=0.5mA. 0.3 v Current Gain-Bandwidth Product = | fr Vee=5mA, lo= 10V 260 MHz Output Capacitance Cob Veo=10V, le=0 37 pF f=1.0MHz Input Off Voltage Vilott) | Vee=5V, le= 100pA 0.6 v Input On Voltage Vilon) | Vee=0.3V, le=5mA 3 v Input Resistor Ry 32 47 | 62 | Ka Resistor Ratio Ry/Re 0.9 a ]o14t Equivalent Circult ; CCotector (Output) A , Base (input) . a Eniter (Gnd) LL & SAMSUNG SEMICONDUCTOR 291
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7 VAOFF) (V) INPUT OFF VOLTAGE ‘Td*C), AMBIENT TEMPERATURE
& SAMSUNG SEMICONDUCTOR : 202