KSR1002 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC T35+j|14E 0 | 2964142 0007017 3 I KSR1002 NPN EPITAXIAL SILICON TRANSISTOR —_—— SWITCHING APPLICATION (Bias Resistor Built In) _ : '* Switching circuit, Inverter, Intertace circuit Driver circuit 0-92 * Bullt in bias Resistor (R,=10K9, R,=10K2) * Complement to KSR2002 ° ABSOLUTE MAXIMUM RATINGS (T, =25°C) [eens Pom | tn] Collector-Base Voltage Veeo 50 v . Collector-Emitter Voltage Veco | 50 Vv ‘ Emitter-Base Voltage Vewo ' 10 v Collector Current lc 100 mA Collector Dissipation Po 300 mw Junction Temperature Tj 150 °c Storage Temperature Tstg -55~ 150 °c 1. Emitter 2. Colector 9. Base 3 | ELECTRICAL CHARACTERISTICS (T,=25°C) [esse [ssa [Tecan | om | oe | mo | oa | Collector-Base Breakdown Voltage BV cso. c= 10pA, le=O 50 Vv Collector-Emitter Breakdown Voltage | BVceo Ic=100pA, Is=O 50 Vv Collector Cutoff Current Iev0 Veo=40V, le=O pA OC Current Gain tre Voe=5V, Ic=5mA 30 Collector-Emitter Saturation Voltage | Vce(sat) | b= 10mA, lp=0.5mA v Current Gain-Bandwidth Product tb Voe=5mA, l= 10V 250 MHz Output Capacitance Cob Vea=10V, le=O 3.7 pF f=1.0MHz Input Off Voltage Viotf) Voe=5V, Ic= 100A 05 v Input On Voltage Vion) Vee*0.3V, lc=10mA v Input Resistor Ry 7 10 Ko Resistor Ratio RURe 0.9 1 . Equivalent Circult Cotector (Our fn, ‘Base (input) 7 Rm ‘Emitter (God) & SAMSUNG SEMICONDUCTOR 267
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ot EEEUETTTT TY © CELINE ° oe oe 1 a 20 o 2550 75 100 125 150 175 200 VAOFF) (¥) INPUT OFF VOLTAGE TOs RENT A ttn . . : 88 sawsuna SEMICONDUCTOR 888