KSR1001 SAMSUNG | Alldatasheet
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. eee SAMSUNG SEMICONOUCTOR.INC }4E D rset gog?o1s 4 | eee KSR1001 NPN EPITAXIAL SILICON TRANSISTOR’ SWITCHING APPLICATION (Bias Resistor Built in) u * Switching circuit, Inverter, Interface circuit Driver clrcult 0.02 © Built in bias Resistor (R,=4.7KQ, R:=4.7K2) + # Complement to KSR2001 . ABSOLUTE MAXIMUM RATINGS (T, =25°C) [= eee [om [ne [oe] Collector-Base Voltage Ves. 50 v . Collector-Emitter Voltage Veo 50 v Emitter-Base Voltage Veeo 10 v ' Gollector Current te 100 mA Collector Dissipation Po 300 | mW Junction Temperature a) 150 °C Storage Temperature Teta -s5~150 | °c . 1. Emitter 2. Collector 3. Bese ELECTRICAL CHARACTERISTICS (T,=25°C) . [eis | ewan [om [wae [om Collector-Base Breakdown Voltage | BVcso | lo= 104A te=0 50 v Collector-Emitter Breakdown Voltage | BVceo Ic=100pA, la=O 50 v Collector Cutoff Current leeo Veo=40V, le=0 o1 | yA DC Current Gain hee Vce=5V, l= 10mA 20 Collector-Emitter Saturation Voltage | Vce(sat) | lc=10mA, le=0.5mA 0.3 Vv Current Gain-Bandwidth Product fr Vee=5mA, ic= 10V. 250 MHz Output Capacitance Cob | Vea=10V, le=0 37 pF fe1.0MHz | Input Off Voltage Viloff) | Vee=SV, le=100pA 0.5 Vv Input On Voltage Viton) Vee=0.3V, le=20mA 3 v Input Resistor Ry a2 | 47 | 62 | Ka Resistor Ratio RR 09 roast Equivalent Circult Cotecter (Output) Base (Input) . miter (Goa) ——— 8 samsunc SEMICONDUCTOR vo dss"
SAMSUNG SEMICONDUCTOR INC “-354\\24e 0 ff 7264342 ooo7OLL & ff KSR1901. NPN EPITAXIAL SILICON TRANSISTOR INPUT ON VOLTAGE Sot i CURRENT GAN ‘ PCO Ca @ CHM nee TTI lass meeiiiieeeesit| ¢ OTe TIT) = 8 JR HE PALIT Ct aii ii : . Elm, COLLECTOR CURRENT : IefmA) COLLECTOR CURRENT , INPUT OFF VOLTAGE POWER DERATING “He ET TT EEE ESE EEE wt Tt TT gSEEEEFEREERERA PCA COAT ) rT pee EEE EAE TTT =CECCCE eee ttET KET I CO CN VAOFF) (V) INPUT OFF VOLTAGE TA°C), AMBIENT TEMPERATURE eR sasuna SEMICONDUCTOR : : 206