KSK30 SAMSUNG | Alldatasheet
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a — = SSS eee eee SSS SSS—S—595—5—50505080800 NNN — SAMSUNG SEMICONDUCTOR INC 1 WE OD | 7964142 0006993 0 | T- 29-25 7 KSK30_. SILICON N-CHANNEL JUNCJION FET ee LOW NOISE PRE-AMP. USE : High Input impedance: fyu=1mA (MAX) roe Low Nolse: NF =0.5d8 (TYP) High Voltage: Vee =~SOV . ABSOLUTE MAXIMUM RATINGS (T, =25°C) Gate-Drain Voltage . Vote -50 v Gate Current lo 10 mA . Collector Dissipation Po 100 mw ' Junction Temperature ui 126 *c Storage Temperature Tstg -550125 | °C 1. Source 2. Gate 3. Drain ELECTRICAL CHARACTERISTICS (T.=25°C) | 3 [____erwctoiste | Symbsi| Too Gonston | am | ow | wx | un Gate-Drain Breakdown Voltage BV om Vos™0, b=-100A "| ~50 v Gate Leak Current Ions Vos —30V, Vos=0 -1 A Drain Leak Current toss Vos™10V, Vos=0 0.3 65 | ma Gate-Source Voltage Verlott) | Vos=10V, lo=0.1 4A -0.4 -5 v Forward Transfer Admittance Wel | Vos 10V, Vas=0, f= 1KHZ | 1.2 ms Input Capacitance Cass 1 Vos=0, Vye=0, f= 1MHz 8.2 pF Feedback Capacitance Coss | Vga —10V, Vos=0 f=1MHz 2.6 pF Noise Figure NF Vos 15V, Vos=0 R= 100KN 0.6 5 | a8 1=120Hz loss CLASSIFICATION [omstenn | on [oo Te Te] es og ed cde) oOo ef SAMSUNG SEMICONDUCTOR : 283.
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