KSK211 SAMSUNG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
SAMSUNG SEMICONDUCTOR INC . L4E D | 2964142 00070117 | Under Development . KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER t__. T3125 VHF AMPLIFIER Sor-23 ‘+ NF = 2.5 dB (TYP) . : 1¥rs| = 9.0 mS (TYP) . ABSOLUTE MAXIMUM RATINGS (T, =25°C) ~ eI ec, Gate-Drain Voltage 1 Veco | =18 a fw” . Gate Current ile 10 ma! ? Power Dissipation i Po 200 mw Junction Temperature t 150 °c: * Storage Temperature | Tstg -55~ 150 co! 1, Base 2, Enter 3. Cotecter ELECTRICAL CHARACTERISTICS (T,=25°C) : | Characteristic ' symbol | Test Condition Min | Typ Unit | ! Gate Cut-off Current loss Vas= —0.5V, Vos=O yo 710} nA _ | Gate-Drain Breakdown Voltage + V(BRlcoof6=— 100yA, Drain -18 H v | Drain Current loss Vos=10V. Vos=O , 10 10 | ma , | Gate-Source Cut-off Voltage Ves(otl) Vos 10V, b= 1yA 0.4 40} ov ' | Forward Transfer Admittance i WMesl + Vos=10V. Vos=0, ' 9 ms ‘ {= 1kHi 7 Reverse Transfer Capacitance Coss Veo" 10¥. f=1MHz : 0.15 pF | Power Gain Ces © Voo™ 10V, f=100MHz 18 f dB t Noise Figuer NF { Voo=10V, 1=100MHz | 25 35 4B Ipss CLASSIFICATION ° Classification § = 890 YG, ————————_ eeeeeeSeSSSSSSSSSSSSSSSSSSSSSSSSMMMMsee AH SAMSUNG SEMICONDUCTOR 26
SAMSUNG SEMICONDUCTOR INC auc o Bp zae4z42 ooozo12 4 i * Under Development KSK211 SILICON N-CHANNEL JUNCTION FET KSK211— SILICON NCHA I 1-31-25 ‘STATIC CHARACTERISTIC lo-Vos ‘ “TOT TT ° [TL] , HEE EEE H . ECE) eer "co [Th rT CHEE ececeeeeeeeeeeee) Bt & Fett pace] Rvenpess= | Hts Mert 5 TOT Lite Coo Ace Z “PELE so aEveann |] S beeen 5 HA seen Hee icra 1 Lh . FEET aw | flee cmos there == Se es eS SS sof a) FF r= oon TERRE ee 2 (SSS Spare eco eg CL eee He Sa a SS == i. aan ; pigs ? Hae = Ep —— =o) 1 — — § 0s === 1 SS ae See . orf} == * sex} —j a OF ee ONEORANWOTRGE «Sat. onmwesounce votrAce voven venaria wep a welt Cece Trey 3 rN To, Tee A] 3 a ECONECEE Ey ob po e"T] ALT ETT) ¢ rt AMMA
2 TiN oi Ae
oa | BEBE EZOAy LT TT IN Ty | eBpEZsceA~sK ORS 80 7S N00 128 150 7S B00 225 760 Sig et oe woe eal anteane ; on anvesouncevlThee a eRsawsunc SEMICONDUCTOR 282 :
SAMSUNG SEMICONDUCTOR . INC LYE D Jee 0007013 O I , - - ‘“Unaer Development KSK211 SILICON N-CHANNEL JUNCTION FET KSK211 SILICON N-CHANNEL JUNCTION FET T-31-25 : Yis4o . Yis-Vos ‘ :| TTT TTT SSS, CREPE ee | PH Ltt ae ) See = === Pa SSS | H 12] H Ps Sa poetry bees g. ‘ SSS aS POA HH PSE) - Ry dgeeseees@eicccccc ccc PV a= S======== Poo) Ep © amit naavecnaenr 2” Vos, DRAIN SOURCE VOLTAGE Ciss-Veu I¥fs}toss soof ft 4 aes 3 sobre varrov —| fit + pee) PEGS S ofp apt | get tek - Dee wee ain axresounct VOLTAGE ee 888 yuan oranccunnens Yi, Yrot Veslotf}toss. : 20] Ein erro I . BME TT pn tae . ii “ERE ee § JIE Rr é Fs a am === — = asc mH ” — ee eRsasunc SEMICONDUCTOR “283
SAMSUNG SEMICONDUCTOR INC rue o ff zseun42 ooozoi 2 &f Under Development KSK211 SILICON N-CHANNEL JUNCTION FET T-31-25 . Yos-Vos Vis, Yort * 10 eS 100 , “reece, HEE eal be § ERAS === SSS = pa CAA Mall Sa ee ee a | kee meteted FF ALE SiH .====50==S= itli/ievait Het ooe ft tt yt tt oz} HTH col LEE EE TT] oT LTT TT il ‘eas ounsounce ouaoe eee ce foe eRsausune SEMICONDUCTOR 284°