KSK117 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC __ AHE DO I 2964242 OoO7000 2 I KSK117 SILICON N-CHANNEL JUNCTION FET Ne ee : ; 7-29-25 LOW FREQUENCY LOW NOISE AMP. HighIYts|: 15mS (TYP) : Tosa High Input impedance : tj.=—1nA 7 Low Noise, NF = 1d8 (TYP) . ABSOLUTE MAXIMUM RATINGS (T.=25°C) Lo z Gate Current an 10 mA * Collector Dissipation Po 300 mw ' . ‘ Junction Temperature Ti 126 °c Storage Temperature: Tstg ~55~125 °c ELECTRICAL CHARACTERISTICS (T. =25°C) + brn 2 Soca 3 Oat [erases | Sambo | Test Condition) Min | Typ | Max-[ Unit Gate-Drain Breakdown Voltage BV 00 Vos=0, I= —100HA -50 v Gate Leak Current hae Vg=—30V, Vos=0 -1 nA Drain Leak Current loss Vos=10V, Vos=0 0.6 14 mA Gate-Source Voltage Veslott) | Vos=10V, lo=0.1nA -0.2 “15 Vv Forward Transfer Admittance Yul Vos™ 10V, Va=0, f= 1KHZ 4.0 15 ms * Input Capacitance Coss Vos= 1 0V, Vas 0, f= 1MHz 13 pF j Feedback Capacitance | Coos Vea 10V, lo=0 i . f=1MHz 3 pF Noise Figure NFI Vos= 10V, Ro= 1k? te: fo=0.5mA, = 19Hz 5 10 dB | | NF2 Vos=10V, Ry 1k : Hi 1 Ip=0.6mA, f=1KHzZ 1 2 dB loss CLASSIFICATION [ew [vase [sone [eon] & SAMSUNG SEMICONDUCTOR - 270 .
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