KSD986

KSD986 SAMSUNG | Alldatasheet

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LYE DO 2964142 OOO?beS 4 . . I : I NPN EPITAXIAL SILICON. ____KSD986- DARLINGTON TRANSISTOR -, SAMSUNG SEMICONDUCTO , SAMSUN CTOR INC ne 7-33-29 . _ LOW FREQUENCY POWER AMPLIFIER . - LOW SPEED SWITCHING TO28 INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS (T. =25°C) eee” Collector-Base Voltage Veeo 150 v WA . Collector-Emitter Voltage Veco 80 v L Emitter-Base Voltage Veo ~ 8.0 v Collector Current (OC) le 21.5 A “Collector Current (Pulse) le +3.0 A Base Current (DC) bb 0.15 A . Collector Dissipation (T.=25°C) | P 1.0 w - Collector Dissipation (T.=25°C) Pe 10 w 1 Emiter 2. Cotecter$- Boae - Junction Temperature To |e - 180 °c . ‘Storage Temperature Tstg —55~150 °c . * PW<300ys, Duty Cycle <10% . . ° : ELECTRICAL CHARACTERISTICS (T.=25°C) : [esis [Sm | tence [wn [| ao Collector Cutoff Current bewo Veo=80V, le=0 10 | pA _ | Collector Cutoff Current teen Vee=80V, Rec=510 1.0 | ma Ty= 125°C Collector Cutoff Curent leext Vee=80V, Vee (off) =—1.5V 10 | yA Collector Cutoff Current leo Vee=80V, Vee (off}=—1.5V 1.0 | ma Te=125°C Emitter Cutoff Current feoo Veo=5V, o=0 1.0 | ma |° “DG Current Gain "| res Vee=2V, lo=0.5A 1900 . bres Vce=2V, lo= 1A 2000 30000 *Collector-Emitter Saturation Voltage | Vce (sat) | to=1A, lb=1mA 18] Vv *Base-Emitter Saturation Voltage Vee (sat) | Lo=1A, y= tmA 20] v Tum On Time ton [=1A, RL=509 ms Storage Time ta *| byt =—le2=1mA 4s Fall ime t Voc#50V 13 *Pulse Test: PWS350ys, Duty Cycles 2% . . hre(2) CLASSIFICATION - ; . . [covateatn |e foe | + | & SAMSUNG SEMICONDUCTOR 200 .

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: SAMSUNG SEMICONDUCTOR INC LYE D | 2964442 0007628 4 I KSD1691 NPN EPITAXIAL SILICON TRANSISTOR . T- 33> OF LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT Toa HIGH POWER DISSIPATION : PT = 1.3W (T,=25°C) Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS (T, =25°C) LEY [___mctnte [ syet [tatoo | vt oe Collector-Base Voltage Veoo 60 v Vi Collector-Emitter Voltage Veeo 60 v Emitter-Base Voltage Vev0 7 v . Collector Current (DC) le 5 A ¢ 7 }* Collector Current (Pulse) kb 8 A Base Current (00) lo 1 A Collector Dissipation (T.=25°C) | Pe 13 w Collector Dissipation (T.=25°C) | Pc 20 w : Junction Temperature ul 150 °c : . ‘Storage Temperature Tstg -55~150 | °C 1, (Beiter 2. Coltacter 8, Base 3 | * PWE 10mS, duty cycle < 60% ELECTRICAL CHARACTERISTICS (T, =25°C) mo . [eres [nna [sows [ wm | op [oe [| Collector Cutoff Current eso Voa=50V, le=0 10 | yA Emitter Cutoff Current feoo Vea=7V, b=0 10 | pA ["DC Current Gain bet Vee=1V, b= 0.14 60 : brea Vee=1V, b= 2A 100 400 fees Vee=1V, b=5A 50 |" Cotlector-Emitter Saturation Voltage | Veelsat) | = 2A, lo=0.2A 0.4 0.3 v |"Base-Emitter Saturation Voltage Vee(sal) | e=2A, ty=0.28 - 0.9 1.2 v Tum On Time ton lo 2A, lar =—lez=0.2A . | 02 1 Hs Storage Time ey RL=52, Voo=10V 14 25 | 4s Fal Time w 0.2 1 HS * Pulse test: PW < 360ys, duty cycle < 2% Pulsed - . . hre (2) CLASSIFICATION ~ : [ewanonn [0 Toy Toe | AH SAMSUNG SEMICONDUCTOR 203

SAMSUNG SEMICONDUCTOR INC LYE D | kao goo?7be9 & I KSD1691 NPN EPITAXIAL SILICON TRANSISTOR T33-C4 ; owen vena «pgnarwa cin oF sae tna aneas “STOTT TT eo [TTLELLILL oa “CLLELLEL pe pet PCN TTT LIS Sx Pooeeyeoe f+ ARSC EEE HAS COPPA LTT tT | NT FORWARD BIAS SAFE OPERATING AREA REVERSE BIAS SAFE OPERATING AREA . Hine Ere EY [TTT TTT TT : oe CONN SEE itt TTT : pC PUTMAN TH f-EEERFEE--H PLULING ID PELEAEE 2° eh z $ See EO OO : oz} —| TT TT il | —LCTTTIE TT) eee ee Tan tute cameos wn cousronae vac [tte TT SAAS EH . He sof EHEC L THE | eee pea a . YZ - a eet Se aiifiimerereeriii cy 25 eee ¢ eee 2 SSS SE eee | / 2 : FE HHA : a in couthonenitn vane Sa concees ee eG samsunc SEMICONDUCTOR . _ 204

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