KSD882

KSD882 SAMSUNG | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

— - > = ~ ~ ae SAMSUNG SEMICONDUCTOR INC we o Bf zw4a42 ooom19 3 a - T~ 33-07 KSD882 . NPN EPITAXIAL SILICON TRANSISTOR ——— “AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING rons * Complement to KSB772 . ABSOLUTE MAXIMUM RATINGS (T,=25°C) <p uo, } Collector-Base Voltage . Veoo “40 v * Collector-Emitter Voltage Veco 30 v Vi . | Emitter-Base Voltage Vea0 6 iv ¢ * Collector Current.(DC) lo 3 fA _ Collector Current (Pulse) ke ' 7 bad . ! Base Current (DC) | lo 0.6 | a | + Collector Dissipation {T.=25°C) | Pc mow . = Collector Dissipation (T,=25°C) | P. 1 w . Junction Temperature t 150} °C + Emit 2- Cotector 3. Base Storage Temperature Tstg -s5~160 | °c * PWs10ms, Duty Cycle <50% . ELECTRICAL CHARACTERISTICS (T, =25°C) . : Characteristic | Symbol } Test Condition Min | Typ} Max | Unit | | collector Cutott Curent | tee Ves=30V, le=0 1 WA | | Emitter Cutoff Curent leo Veu=3V, lo=0 1} yA ke ‘Current Gain rer} Vee=2V, le=20mA 30 150 | | H eee Vee=2V, c= 1A 60 | 160 | 400 | ;*Collector Emitter Saturation Voltage Vee (sat) | le=2A, la=0.2A 03 | 0.5 Vv H {*Base Emitter Saturation Voltage Vee (Sal) | Io=2A, fa=0.2A 10 | 20 | v j Curent Gain Bandwiath Product | f; | Vee=5V, le==0.1A 90 MHz | Output Capacitance Cob | Vee= 10V, =O i 45 pF i f= 1MHz * Pulse Test: PWS350ys, Duty Cycle<2% hre(2) CLASSIFICATION . . —_— Ss & SAMSUNG SEMICONDUCTOR _ 198

|SAMSUNG SEMICONDUCTOR. INC LYE D ff 7964342 ooOr20 + I KSD882 NPN EPITAXIAL SILICON TRANSISTOR . 1-23-07 stave cHanacrénstc be cunmenr aay eee HH | SHS eee ed | 1 Ee Ht i tt eT] oo TTT TT CTT) See el eee 3 a Sk ’ matt aeeeeiii i eesti eee Aneel HHH HHH ESSE) CnC Ver), COLLECTOR-EMITTER VOLTAGE an ‘IefmA), COLLECTOR CURRENT . 7 conASSEMTRER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 3 | Pee ailil Sait meatless oo EHP Ht st | alla, Beit setiaeenti A se CE 3 Sracci ests aes Soe SAR ee) ic MMe mill mil oof att mar bail Ses Sei Sc Me Sst Seniesa 24 is a CEE no AH St cougron como a couscroncummen COLLECTOR ouTPUT caractaNce SAFE OPERATING AREA oo =H =FrH =H ARRAS HH oo mania er CS ati eet a a (COSTE IT . 3 og 8 i °F SSH BOTTI UTM ET UTE CTT Aer eer eat oe Ere Pd maa HF oot FEET EHH COUNT CFLCT Co Veh, COLLECTORBASE VOLTAGE ‘Vex(V), COLLECTOR-EMITTER VOLTAGE eee e samsuna SEMICONDUCTOR 195

SAMSUNG SEMICONDUCTOR INC ue 0 7964142 ooovear 2 ff KSD882 NPN EPITAXIAL SILICON TRANSISTOR ; “T-33-07 DERATING CURVE OF SAFE OPERATING AREAS owen oenarnes "TTT TTT] (FATT TT wt} TET ETT TTT I iol +H Po. : iS LE PLN ET TTT — CEENENCES CESSES ot TAOS oe EEN EET att TE NEE TY LETT N TT rH SAMSUNG SEMICONDUCTOR 196

4E buh . We 0 J 2seun42 ooaeze 3° NN eprraxtat SILICON . KSD985 . DARLINGTON TRANSISTOR . SAMSUNG SEMICONDUCTOR INC ° ope ~- - 7-33-29 LOW FREQUENCY POWER AMPLIFIER 7 LOW SPEED SWITCHING : ones INDUSTRIAL USE. ABSOLUTE MAXIMUM RATINGS (T, =25°C) Me Collector-Base Voltage Veso. 150 Vv Vi . Collector-Emitter Voltage Veeo 60 v ¢ Emitter-Base Voltage Veso 8.0 Vv . Collector Current (OC) . le 41.5 A “Collector Current (Pulse) te . £3.0 A Base Current (DC) le” 0.15 A- Collector Dissipation (T.=25°C) Pe 1.0 w . Colector Dissipation 1.=25°C) | Pe 10 w Emit 2 Cotestor 3. Ouse | 3 | Junction Temperature a . ~ 160 °c ‘Storage Temperature . Tstg 65160 °c | . "+ PWs300ys, Duty Cycle <10% . . ELECTRICAL CHARACTERISTICS (T.=25°C) , | ___cnwciine Tmt [tnt conton | wim [tw | we [ui] ~ | Collector Cutoff Current” keoo Vea=60V, le=0 |. 10.] pA Collector Cutoff Current len Vee=60V, Rec=512 1.0 mA Ta=126°C . Collector Cutoff Current . leet Voe=60V, Vee (off}=-1.5V . 10 uA . Collector Cutoff Current -- leex2 Vee™6OV, Vee (off)=—1.5V | 1.0 mA . T.=125°C Emitter Cutoff Current . levo. Vee=5V, =O J 1.0 mA *DC Current Gain = Dees Vee=2V, =0.5A 1000 . . Deez Vee=2V, lo= 1A 2000 30000 *Collector-Emitter Saturation Voltage Vee (Sat) | lo=1A, p= 1mA. 15 v . . *Base-Emitter Saturation Voltage Vee (sat) | ic=1A, l= mA 2.0 v Tum On Time ton i 1A, RL=502 06 . ry Storage Time ts fol =—[g2=1mA. 1.0 7 us Fall time . 7 Vec®50V_ 1.0 . ry *Pulse Test: PWS350ys, Duly Cycle<2% . hre(2) CLASSIFICATION : — [oseinonn [eT oe fd [eT mena [en | sn | rH SAMSUNG SEMICONDUCTOR . 197

aye 0 Bp zseuive oo07G23 sf pA EPITAXIAL SILICON KSD985 DARLINGION TRANSISTOR SAMSUNG SEMICONDUCTOR INC : u 7-33-29 . STATIC CHARACTERISTIC DC CURRENT GAIN - | Veooaae Sood esta iif oe sllttieeteceee||

4 TTIW Let | aia

(Run 2ocanee ee aaa . CORSET ps GS i ; HA PTE PCE Te oY TT Ty oA FFE CPEECCEE) oBTE SER See ee eae) | Nef, couscTonnieh voutaae quay COLLECTOR cummed EE EATON ATION VOLTAGE _ DERATING CURVE OF SAFE OPERATING AREAS

0 SS 0

erect +t 44] 3 og Aas O11 2d ps LETT FREES at MTT i Hil eNOS iE er iil & SR SSE SH TTT | NTT AM TI LEE EE INT * as couecton cixinen . Te") CASE TEMPERATURE . REVERSE BIAS SAFE OPERATING AREAS SAFE OPERATING AREA SEE “ES ) EC a -LEP 3 SN eeeatill ANNI . a § Baim’ EHH a ee ee COCCCTECTE EEE HAE a ven coucroveun vane ve courier eae : €88 samsunc semiconoucron 198

ME oO Bp rae4n42 gone 7 ff NPN EPITAXIAL SILICON KSD985 : - DARLINGTON TRANSISTOR SAMSUNG SEMICONDUCTOR INC ; 0 vowen vars (1-33-29 TT . LE PON tee HH F . PEN ECE PECASCEEH Jt TEN ET nason CoN = ee €88 samsune semiconoucton 199