KSD794 SAMSUNG | Alldatasheet

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_ - ~ 2 OE SAMSUNG SEMICONDUCTOR INC LYE DO | Rarer g007614 4 I KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR -__ Co 7 7-33-07 i AUDIO FREQUENCY POWER AMPLIFIER. > i * Complement to KSB744/KSB744A To126 . : "ABSOLUTE MAXIMUM RATINGS (T. =25°C) i Characteristic [symtot| ating_| Unit i | Collector-Base Voltage Veo 70 v . : | Cotector-Emitter Voitage : Ks0794 | Vee 45 |v : i : KSD794A - 60 v . EB | Emitter-Base Voltage Veso 5 v . } Collector Current (DC) ko. 3 A r i+ Collector Current (Pulse) ke 5 A | ! Base Current (DC) la 0.6 A | . | Cottector Dissipation (T,=25°C) Pe . 4 w . j Collector Dissipation (T.=25°C) Po 10 wl | Junction Temperature ul 150 °C 1. Emilter 2. Colector 3 Base j Storage Temperature Tstg —55~150| °C * PWS10ms, Duty Cycle <50% . ELECTRICAL CHARACTERISTICS (T, =25°C) . [eres [oom [sew canon [we [tw [om [oa | Collector Cutoff Current keoo' | Vos=48V, le=0 1 yA Eniitter Cutoff Current teoo Veo=3V, lo=0 1 [uA . "De Current Gain bees Vee=5V, lo=20mA 30 70 . tree Vee=5V, lc=0.5A 60° 100 | 320 “Collector Emitter Saturation Voltage | Vce(sat) | lo=1.5A, la=0.15A 0.3 2 v |*Base Emitter Saturation Voltage Vee (Sat) | Ic=1.5A, l=0.15A 08 2 v Current Gain Bandwidth Product fr Vee=5V, ic=0.1A 60 Miz . Output Capacitance Cob Vea=10V, le=0, f= 1MHz 40 pF * Pulse Test: PWS350ys, Duty Cycles2% Pulsed ‘fire (2) CLASSIFICATION | curio [on [oe Ty | . Pe [em [ee | a | : . oH SAMSUNG SEMICONDUCTOR 180

SAMSUNG SEMICONDUCTOR INC LYE D J rseuse O007b15 & | KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR . . . > 8 secon con 35~87 fee = HHH Poet LTT TT TT CEMA Loin ect eeatt meatttt eemsati BY LE TT TT I es | oe aeeeee SEES EHR rn Fn 4 et A) Cre i yi rit CCE TTT TTT : rate tan xnann Werage eam comer or cae creme AREAS cS) ae ce SERRE TH . in CT 2 4 ; 7 CE NSEC ; SCC ARES ‘opie Hy = LTT | IN St eg HULL TLE ET NTT va ease cao “wa cue orca owen oan ee creuna aes TL BEES ptt TTT i tt ereiweeat ii i NG ee a2 ss PEON PER HERSS PON pail eee | ; | COPPA Ea . 1a CASE TOUPERATURE Vet, COLLECTOR-EMITTER VOLTAGE _——— GO & SAMSUNG SEMICONDUCTOR 190.

SAMSUNG SEMI CGNODUCTGR INC L4HE O I 2?9764L42 GQOO7LLb B I KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR ns bk 2 OY . COLLECTOR OUTPUT CAPACITANCE CURRENT GAIN BANDWIDTH PRODUCT i Sri eee =e ee SS 5S Sariiaens : soo Ht a Hitt FH =H Y eeieeee | ee eee oe. faa | meni mal i Fe ; COMI EHP Ey ° COaUI rn , & SAMSUNG SEMICONDUCTOR 101

,SAMSUNG SEMICONDUCTOR INC L4E O | 2964242 GOO7617 T I “ «SD880 NPN EPITAXIAL SILICON TRANSISTOR eee T~-33- °F LOW FREQUENCY POWER AMPLIFIER rc * Complement to KSB834 ro-220 : ABSOLUTE MAXIMUM RATINGS (T, =25°C) ! Characteristic symbol | Rating | Unit | ROP Collector-Base Voltage Ves 60 hove} fet oo cy Collector-Emitter Voltage Veeo 60 lov a3 ones Emitter-Base Voltage Vex 7 tv tj ™ Collector Current . le 3 of A Jf, . Base Current la 03; A | f . Collector Dissipation (Te=25°C) | Pc 30 | WwW . ; Junction Temperature Ti 160 | °C ! StorageTemperature Tstg =85~150 | °C . 1. ase 2. Colectr 3. Emiter ELECTRICAL CHARACTERISTICS (Tc=25°C) . ee : Collector Cutoff Current evo Veo™60V, le=0 . -| 100. | wa Emitter Cutoff Current . le20 Ves=7V, ko=0 100 | yA Collector-Emitter Breakdown Voltage | BVceo | Ic=50mA, Ip=O0 60 Vv DC Curent Gain = | bres Vee=5V, lo=0.5A 60 300 hes Vee=5V, le=3A 20 . Collector Emitter Saturation Voltage | Vce (sat) | 1é=3A, lo=0.3A 0.4 1 v Base Evmttur On s.2tay Via (on) | Vce=5V, le=0.5A O7 1 Vv Current Gain Bandwidth Product to Vee=5V, o=0.5A 3 MHz Collector Output Capacitance Cob Veo=10V, le=0, 1=1MHz | 70 pF Turn on Time ton fot =—h2=0.2 0.8 ys Storage Time ts Voc30V 1.6 > us Fall Time tf 08 “sS hre(1) CLASSIFICATION i [ cunimoion | oo |» fis | : . . . & SAMSUNG SEMICONDUCTOR #192

SAMSUNG SEMICONDUCTOR INC LYE D Peaeuiue 0007616 1 | 7 id kspsso NPN EPITAXIAL SILICON TRANSISTOR i oR i : 1-33-09 . STATIC CHARACTERISTIC 0C CURRENT GAIN — POR) EEE | tf | pees pod fp ee a a hh | . Ae | FECHEEEH (COTIII TCI HEHE | Bes i FRAGA j ATI : FH LUT SN : Lit) 7 SSeS SS ae PCO ss eee ; CoE TTT se . VecV, BASE-EMITTER VOLTAGE . Vea COLLECTOR EMITTER VOLTAGE at PEEP HIER) pK eH } PEE +} NEES

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