KSD5703 NJSEMI | Alldatasheet
Document overview
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Technical content
JZII.EU <3£,tni-L,onauctori L/^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5703
DESCRIPTION
- High Breakdown Voltage- : VCBo=1500V(Min)
- High Switching Speed
- Low Saturation Voltage
APPLICATIONS
- Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current- Pulse Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE 1500 800 150 -55-150 UNIT V V V A A W
- ' PIN 1.BASE 2. COLLECTOR .' , 3 EMITTER 1 j 3 TO-3PO-OIS package
- ti U*; .. T , A |jf : :. | L — K i t » S - »-0 «- R DIM A B C D F G K J K L N Q R S U Y Z "; _ f.-ft ' f : „ • ' -*
- "• . 4 , z -*- •» G -• J -- I*—-* mm MIN 24.30 15.20 5,20 0,65 3.30 3.90 4.30 0,80 18,30 1,90 10.70 4.40 3.30 3.20 9,50 1,90 1.40 MAX 24.70 15.80 5.80 0.85 3,90 4,10 4.70 1.00 18.70 2.10 11.10 4.60 3.70 3,40 9.70 2.10 1.60 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon NPN Power Transistor KSD5703
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcE(sat) VeE(sat) ICES ICBO IOBO hpE-1 hFE-2 tf PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain Fall Time CONDITIONS IC=8A;IB=1.6A lc=8A; IB=1.6A VCE=1400V;VBE=0 VCB= 800V; IE= 0 VeB= 4V; lc= 0 lc= 1A; VCE= 5V lc= 8A; VCE= 5V lc=6A, IB1=1.2A; IB2= -2.4A; Vcc= 200V; RL= 33.3 fi MIN 5.3 TYP. MAX 5.0 1.5 7.3 0.3 UNIT V V mA u A mA u s