KSD560

KSD560 SAMSUNG | Alldatasheet

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“SAMSUNG SEMICONDUCTOR INC LHE D 7964142 0007608 4 I . Tee ~ NPN LoraxiAL SILICON KSD560 _ DARLINGTON TRANSISTOR OD ee ; . » T~ 33-27 ; LOW FREQUENCY POWER AMPLIFIER : : i LOW SPEED SWITCHING - rome : INDUSTRIAL USE * Complement to KSB601 . “= ABSOLUTE MAXIMUM RATINGS (T.=25°C) $0 Collector-Base Voltage Veso 150 v te . Collector-Emitter Voltage Vero 100 Vv FA - Emitter-Base Voltage Vena 7 v : Collector Current (DC) Ie +5 A . *Collector Current (Pulse) ~ k +8 A Base Current lb 0.5 A Collector Dissipation (T4=25°C) | Po 15 w 1. ave 2. Cotecter 3. Emiter 3 | Collector Dissipation (T.=25°C) | Pc 30 w : Junction: Temperature - 1 150 °C | Storage Temperature Tstg ~55~160° °c . . . * PWS10ms, Duty Cycle <60% . ‘ . ELECTRICAL CHARACTERISTICS (Ts=25°C) [ence [ans [Towson [wn [vn [we [ont] Collector Cutoff Current . leeo Vea=100V, le=O pA OC Current Gain Deer * | Vce=2V, le=3A 2000 | 6000 Deez Vee=2V, l= 5A 500 . |* Collector-Emitter Saturation Voltage Vee (sat) [c=3A, le=3mA 09 v |* Base-Emitter ‘Saturation Voltage Vee (sat) c=3A, e=3mA 1.6 v Turn On Time ton I=3A, RL=16.72 1 us Storage Time | ts bot =—Ie2=3mA, 3.6 us Fall time . tf Vec50V 1.2 us *Pulse Test: PWS350us, Duty Cycles2% Pulsed . . c . hee(1) CLASSIFICATION — | ; ; . R, R, RS3k . R33009 & SAMSUNG SEMICONDUCTOR oo 183

7SSAMSUNG SEMICONDUCTOR INC = = = -L4E D Balsa a | 7: NPN EPITAXIAL SILICON KSD560 . , DARLINGTON TRANSISTOR . _ "7-33-29 ‘STATIC CHARACTERISTIC . DC CURRENT GAIN : LOR ee SRS LT YLT a PCoeacoccco ea : i COPECO | HS ee 2 PU PE =F Ce /saeene | OEE Err CAINE FTE CTE . . Vex(¥), COLLECTOREMITTER VOLTAGE ‘k(A), COLLECTOR CURRENT so RRNA eS oe 6 —— Es med eo a mal : wt ETE] Bo LT Tg NT ‘Eee FEAT TTT € EAA Pet i PEE KEELE] YUN emcee \\ 3 oe EE PLANE] POC rn ay ox ELUTE ENE wascaucnnamen ra cla aroun ° ae . “HERS FOI TTT :

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SAMSUNG SEMICONOUCTOR INC we D Bp rae4a42 ooor10-7 | , T-3F-4 KSD568 NPN EPITAXIAL SILICON TRANSISTOR. ——— OEE LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING To-220 . INDUSTRIAL USE . . * Complement to KSB707 . . ABSOLUTE MAXIMUM RATINGS (Ta =25°C) oP Collector-Base Voltage Ves 100 v YY Collector-Emitter Voltage Veco 60 v P tl Emitter-Base Voltage Ves 7 v : Collector Current (DC) le 7 A *Collector Current (Pulse) le is A . Base Current (DC) : le 35 A Collector Dissipation (T.=25°C) | Pe 0 w |: Collector Dissipation (T=25°C),| Po is w \\ Base 2. Cofactor 3. Emtter 3 | : Junction Temperature a 160 *¢ Storage Temperature Tatg -s5~150 | °c * PWs300u9, Duty Cycle <10% ‘ : ELECTRICAL CHARACTERISTICS (T, =25°C) : [eee Yami toca oma em ee | [2t*] Emitter Cutoff Current tex, | Ven=SV, le=0 10 uA

0 Current Gain rer | Vee 1V, le=3 200

eee Vee=1V, o=5A *Collector-Emitter Saturation Voitage | Vee (sat) | =5A, lh=0.5A 06 v + Base-Emitter Saturation Voltage Voc (8a!) | e=6A, lb=0.5A 18 v . * Pulse Test: PW<a5Ous, Duty, Cycle<2% . . hre CLASSIFICATION . . | cwnewin [oe [oe [+ | . ret & SAMSUNG SEMICONDUCTOR , 185

_ SAMSUNG SEMICONDUCTOR INC HE D Peseuse goo?b11 9 I KSD568 NPN EPITAXIAL SILICON TRANSISTOR . T-33-11 save oumscreisne oo bam oa 1.0) = _ rT] rele CoE Con nO Peeercoo +e i == = TTC CEE sr TTT Pipe | a ooo Amm0 A sn enureroniren vou vi enum cnet vo goutectomen en satunanon VeLtAge — ————_ee_rs . 8 sof OO

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SAMSUNG SEMICONDUCTOR INC A4E O I 2964142 OoO7bLe O | KSD569 NPN EPITAXIAL SILICON TRANSISTOR Oe ~ T-33-11 LOW FREQUENCY POWER AMPLIFIER vo. LOW SPEED SWITCHING ™ INDUSTRIAL USE © Complement to KSB708 . ABSOLUTE MAXIMUM RATINGS (T, =25°C) <— Sz Collector-Base Voltage Veao 100 v 4 . Collector-Emitter Voltage Veco 80 v &, Emitter-Base Voltage Vino 7 v Collector Current (DC) ke 7 A * Collector Current (Pulse) k 16 A Base Current (DC) Ip 35 A . Collector Dissipation (Te=25°C) | Pe 40 w 1, Base 2. Collector 3, Emitter Collector Dissipation (T,=25°C) | Pc 16 w 3 | Junction Temperature “| 150 °c Storage Temperature Tstg 65150 ne * PWS300yps, Duty Cycle <10% ELECTRICAL CHARACTERISTICS (T.=25°C) [senses [oma [von conon [we [ome [ot] pee 2/4]? Emitter Cutoff Current teso Ves=5V, k=O 10 pA 7 |* DC Current Gain Deer Vee=1V, b=3A -200 ree Voe=1V, o=5A * Collector-Emitter Saturation Voltage Vee (sat) | b= 5A, lp=0.5A. 0.6 v * Base-Emitter Saturation Voltage Vee (sat) | lo=5A, lo=0.5A. 1.6 Vv * Pulse Test: PWS350ys, Duty Cycles2% . hre (1) CLASSIFICATION . | cuneate [on [oe Tov. | . eee 8 samsuna SEMICONDUCTOR 187

SAMSUNG SEMICONDUCTOR INC = s- 4D ff 7964242 GOO713 2 I KSD569 - NPN EPITAXIAL SILICON TRANSISTOR 7-33-11 a . STATIC CHARACTERISTIC 4 DC CURRENT GAIN : — 800 AEE LH = FH Ae j EES Cool Paes 0 b+] aa a eo fae ee CCC Te oa pn oe eer ane [tem ccc ener CEE) . VextV), COLLECTOR-EMITTER VOLTAGE . KA), COLLECTOR CURRENT BASEEMITTER SATURATION VOLTAGE DERATING CURVE OF SAFE OPERATING AREAS oan Feo eriiieeettiiaeainiimiili SEE Fed =e | TP I Fag Fa | | Nk I [t | 1 eee NO eo Ler Tm) =F EE ET NET a ceuscrn cman wer ca enone FORWARD BIAS SAFE OPERATING AREA POWER DERATING veo UTIL CUTE EC m woh SONI UME CHT i ott ALT TTT TI oH RECHT TH eR AN LE ee VedV), COLLECTORESMTTER VOLTAGE ‘TA*C), CASE TEMPERATURE & SAMSUNG SEMICONDUCTOR 188