KSD5079 NJSEMI | Alldatasheet
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Technical content
J.£ii£u , Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5079
DESCRIPTION
- High Breakdown Voltage- : VCBO= 1500V (Min)
- High Switching Speed
- High Reliability
APPLICATIONS
- Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC=25-C Junction Temperature Storage Temperature Range VALUE 1500 800 150 -55-150 UNIT V V V A A W f r PIN 1.BASE 2. COLLECTOR 3. WITTER __ o TO-3PML package r: :;••:•• t QJKV. i. ,.' ! t!" ' A v" " "'" i * 1 Hv,r. K ' t . ' •' -* c 4 •; - - u i Z -R- DIM A B D F G H J K L N Q R S U Y "- » mm M!N 19.9€ 15.90 5.50 0.90 3,30 2.90 5.90 0,595 22,30 1.90 10.80 4.90 3.75 3.20 9,90 4.70 2 1 1.90 MAX 20.10 16.10 5,70 1.10 3,50 3,10 6.10 0,605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4,90 2,10 » V ^~ K- ' ' -«- _N"D NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors
Silicon NPN Power Transistor KSD5079
ELECTRICAL CHARACTERISTICS
Tc=25 0 unless otherwise specified SYMBOL VcE(sat) VBE(sat) ICBO IEBO hpE-1 hpE-2 tf PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Fall Time CONDITIONS lc= 8A; IB= 1 .6A IC=8A;IB= 1.6A VCB= 800V ; IE= 0 VEB= 4V ; lc= 0 lc=1A;VCE=5V lc= 8A ; Vce= 5V IC=6A, IB1=1.2A;IB2=-2.4A RL= 33.3 Q ; VCC= 200V MIN TYP. MAX 5.0 1.5 0.3 UNIT V V wA mA us