KSD5076 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

ue£i, U na, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5076

DESCRIPTION

  • High Breakdown Voltage- :VCBO= 1500V (Min)
  • High Switching Speed
  • High Reliability

APPLICATIONS

  • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 1500 800 150 -55-150 UNIT V V V A A W f j PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PML package A i K t ti t . '' 'll z DIM A B c D F G H J K L N R S U V z G -*" *~L mm MiN 19.90 15,90 5,50 0.90 3.30 2.90 5.90 0,595 22.30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 1.90 , MAX 20.10 16.10 5.70 1,10 3,50 3,10 6.10 0,605 22.50 2.10 11.00 5.10 3.95 3,40 10.10 4,90 2.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets nre current before placing orders. Quality Semi-Conductors

Silicon NPN Power Transistor KSD5076

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL VcE(sat) VeE(sat) ICBO IEBO hFE fT tf PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Fall Time CONDITIONS lc= 4A; IB= 0.8A |c= 4A; IB= 0.8A VCB= 800V ; le= 0 VEB= 5V ; lc= 0 IC=1A;VCE=5V lc=1A;VCE=10V |C=4A, IB1=0.8A; IB2=-1.6A RL= 50 0 ; Vcc= 200V MIN TYP. MAX 5.0 1.5 0.4 UNIT V V wA mA MHz u s