KSD5075T NJSEMI | Alldatasheet

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Technical content

, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5075T

DESCRIPTION

  • High Breakdown Voltage- :VCBo=1500V(Min)
  • High Switching Speed
  • High Reliability

APPLICATIONS

  • Electronic ballast applicaition
  • High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC-25'C Junction Temperature Storage Temperature Range VALUE 1500 800 3.5 150 -55-150 UNIT V
  • V V A A W * ^ , 2 fW .3
  • * 1 PIN 1.BASE j 2. COLLECTOR ' _ 3. EMITTER ! 2 3 TO-220C package wi ! ¥ f A ! * -•• B H -» ** V *( L-F ±&$ i T H '-, j T, Si ^ K F J r rrD c I DIM A B r D F G H J K L Q R S U V 5di-' t — » mm MtN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 — T506-
  • ii '•SOO RK NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Power Transistor KSD5075T

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL VcE(sat) VBE(sat) ICBO IEBO hFE fr tf PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Fall Time CONDITIONS lc= 2.5A; IB= 0.8A lc= 2.5A; IB= 0.8A VCB= 800V ; IE= 0 VEB= 5V ; lc= 0 lc= 0.5A ; VCE= 5V lc=0.5A;VCE=10V lc=3A, IB1=0.8A;IB2=-1.6A RL= 66.7 Q ; VCC= 200V MIN TYP. MAX 8.0 1.5 0.4 UNIT V V uA mA MHz u s