KSD5068 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

J\\ft t O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5068

DESCRIPTION

  • High Breakdown Voltage- : VCBO= 1500V (Min)
  • High Switching Speed
  • High Reliability

APPLICATIONS

  • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICP PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE 1500 800 150 150 -55-150 UNIT V V V A A W r 2 3 PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PN package H— B— - * C -- 4"V -- !' > Tucur/r-soj '" '•>" ..:. At'EJ ! I iL; _l .. • -
  • H I t' ' K — f-j
  • *• *-R DIM A B C D E F G H J K L N Q R S U mm MIN 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 MAX 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.10 Y 9.90 10.10 f'i-L -«-*-D -«-N-»- NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon NPN Power Transistor KSD5068

ELECTRICAL CHARACTERISTICS

Tc=25 0 unless otherwise specified SYMBOL VcE(sat) VsE(sat) ICBO IEBO hpE-1 hpE-2 tf PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Fall Time CONDITIONS IC=6A; IB=1.2A lc= 6A; IB= 1 ,2A VCB= 800V ; IE= 0 VEB= 4V ; lc= 0 lc=1A;VCe=5V lc= 6A ; VCE= 5V IC=6A,IB1=1.2A; IB2= -2.4A RL= 33.3 Q;VCC= 200V MIN TYP. MAX 5.0 1.5 0.3 UNIT V V uA mA li S