KSD5017 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC ee KA | re NPN TRIPLE DIFFUSED KSD5017 © PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL ‘OUTPUT ‘ T-33-11 , APPLICATIONS Torr). "High CollectorBase Voltage Veso=1500V ABSOLUTE MAXIMUM RATINGS (T, =25°C) ERO > Collector-Base Voltage Veo 1800 v JE Sa Collector-Emitter Voltage Veeco 800 v Emitter-Base Voltage Veo 6 | v Ye “ Collector Current k 6 A ’ Collector Current (Peak) k 16 Al Collector Dissipation (Ts=25°C) | Pe 60 wi! Junction Temperature Ty 150 “cf ‘Storage Temperature Tstg 55150 J~°c ! ELECTRICAL CHARACTERISTICS (T, =25°C) [eens Tov [erin Po [ ow [oe [oo] S526 8 (1) Emitter Cutoff Current feao Vea=8V, fc=0 1 | ma DC Current Gain tee Vee=5V, e=1A Collector Emitter Saturation Voltage | Vee(sat) | lc=SA, l= 1A sf} ov Base-Emitter Saturation Voltage Vec(sat) | b=5A, lp=1A 15 v ‘Current Gain Bandwidth Product tr Vee=10V, = tA MHz Fail Time & Ie=5A, et =1A 04 us h2=-2A, AL=400 OO 255 EH SAMSUNG SEMICONDUCTOR
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SAMSUNG SEMICONDUCTOR INC 14e 0 ff 2su4242 ooo7L083 4 I BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR. ae eld : HIGH VOLTAGE SWITCHING . : USE IN HORIZONTAL DEFLECTION Yo-220 OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS (T, =25°C) op CS g? Ss ee” Collector-Base Voltage Voso, 400 v LA A . Cottector-Emitter Voltage Veeo 200 v J Emitter-Base Voltage ~ Veno 6 v Fi le Collector Current le 7 A Collector Peck Current tow 10 A Base Current le 4c | A Collector Dissipation Po 60 w st Te Tj . 60 °c Borage Tenperaure Tstg ~05n180 °c 1+ Base 2. Cofector 3. Emer ELECTRICAL CHARACTERISTICS (Ta=25°C) . re a Collector Cutoff Current (Vse=0) kes Vee=400V, Vee=O 5 mA Vee=250V, Vee=O , 100 | pA Vee=250V, Vee=0, To= 150°C 1 mA Emitter Cutoff Current (lc=0) tepo Vee=6V, le=O 1 mA Collector Emitter Saturation Voltage ; BU4O6 Voe(sat) c=5A, le=0.5A 1 v : BU406H k= 5A, le=0.8A T vo : BU408 le=6A, lo=1.2A 1 Vv Base Emitter Saturation Voltage 7 BU406 - Vae(sat) c=5A, le=0.5A 1.2 Vv + BU406H_ Ic=5A, lp=0.8A 1.2 v : BU408 ke=6A, lb=1.2A 1.6 Vv ‘Current Gain-Bandwidth Product tr Vee=10V, e=0.5A MHz [ Tum-Off Time : BU4OB ‘tot c= 5A, lb=0.5A 0.76 “ss : BU406H Ic=5A, lp=0.8A 0.4 es : BU408 _* | les6A, lo= 1.28 . 04] ys SSSSSSSSSSSSSSSSSSSSSSSSSSSSS & SAMSUNG SEMICONDUCTOR 288 é
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