KSD5015

KSD5015 SAMSUNG | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

ME D Bf eae4a42 ooo7m24 Oo I. : . NPN TRIPLE DIFFUSED KSD5015 PLANAR SILICON TRANSISTOR SAMSUNG SEMICONDUCTCR INC / ( Taae1 COLOR TV HorIzoNTAl ouTPuT — APPLICATIONS TosP ; High CollectorBase Voltage Voeo = 1500V . ABSOLUTE MAXIMUM RATINGS (T,=25°C) Om Yi “A Collector-Emitter Voltage Veeo 800 v ‘ Emitter-Base Voltage Veo 6 Vv Collector Current Ie 35 A ‘ Collector Current (Peak) Ie 10 A Collector Dissipation (Te 25°C) Po 60 Ww . Junction: Temperature qj 150 ed Storage Temperature Tstg -55~150 °c ELECTRICAL CHARACTERISTICS (T.=25°C) [ante Tomei torn Da [oe [oe [a] Bee Se ||.) Emitter Cutoff Curent * ‘eso Ves=5V, lo=0 1 mA . DC Current Gain Dee Vee=5V, b= 0.5A . Collector Emitter Saturation Voltage Voe(sat) c=2.5A, lb=0.8A 8 v Base-Emitter Saturation Voltage _ Voe(sat) e=2.5A, la=0.8A. 1.5 Vv Current Gain Bandwidth Product fr Vee=10V, Ic=0.5A Miz Fall Time t e=3A, Ig ~0.8A « 0.4 us - ok AH SAMSUNG SEMICONDUCTOR , 249

LYE D P eseaase 0007675 2 | NPN TRIPLE DIFFUSED KSD5015 PLANAR SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR - INC . T-33-11 . . “ ‘STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE | TEEPE TTT TTT] TTT Ty ee] ; HEM HH] (EE | eee CC . Zee 3 seer | | dT | : Se Be ogee ae Ty] a =a ee ema ee APE Hq FH} Fe LLLitt retry Ltt ii i in ducbonta oat cent na DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE 3 | maitamaatitiamaaiii FE oe ee eee, | COMMENT gas Se se P= © 0s Se ee

02 ECHL ETH 02 FEE SE

oo TTI THI TTT <8 nF von ow ue cart oe aca SSE SHEP HTnE tH

1 EEE SHH ss

LUTE TUTTI) = ESSERE FRAT ee eK sausunc SEMICONDUCTOR . 250

Lye D Bf zauuaue 0007676 4 ff NPN TRIPLE DIFFUSED KSD5015 PLANAR SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR INC 7-33-11 Seer eeercee snl CANCEL eeCLHIP TTT “TENE Bert 2c oc EEE) CCe Nero

8 EET rLCERLLIELE

00s P= A HHS 10 . oe HHH EH rH SERN cabcatilt TAMIA | CCNA] ° * sam cousstonsimenvanes © Sco; onse rewrenanne - 2 | & SAMSUNG SEMICONDUCTOR . 251

auc o Bp zse4n42 ooo7e77 & &f NPN TRIPLE DIFFUSED KSD5016 PLANAR SILICON TRANSISTOR SAMSUNG SEMICONDUCTOR INC : \\ T-33-11 - COLOR TV HORIZONTAL OUTPUT: | APPLICATIONS ; ros) ; | High Collector-Base Voltage Vcxo=1500V | ABSOLUTE MAXIMUM RATINGS (T.=25°C) ae LO wh Characteristl unit Pe eh 8 Ses . | Collector-Base Voltage Veso 1500 vii PeRr3 Collector-Emitter Voltage Veeo 800 voi | Emitter-Base Voltage Veo 6 vi il. . ! Collector Current Ie 5 A} ‘ t Collector Current (Peak) Ic 16 A | Collector Dissipation (To=25°C) | Pe eo j wi : Junction Temperature Ti i 5% | “cj i Storage Temperature Tstg ~s5~150 | °C i ELECTRICAL CHARACTERISTICS (T.=25°C) i ; | eee oe [rains Dm [oe Lom] "| Emitter Cutoff Current eso Vea™5V, e=0 mA DC Current Gain tee Vee= SV, k=tA ‘Collector Emitter Saturation Voltage | Vce(sat) | Ic=4A, lp=0.8A v Base-Emitter Saturation Voltage Vee(sat) | lo=4A, In=0.8A v Current Gain Bandwidth Product fr Vee=10V, le 1A MHz Fall Time ty Ic=4A, lo1 =0.8A, ry i Is2=—1.6A, RL=509 i i i a | : HH SAMSUNG SEMICONDUCTOR 262

SAMSUNG SEMICONDUCTOR INC = L4€ 0 JJ 7964242 OO07b78 4 | NPN TRIPLE DIFFUSED : KSD5016 oe PLANAR SILICON TRANSISTOR — ee Os . ‘STATIC CHARACTERISTIC BASE-EMITTER ON ‘VOLTAGE eee Cocos eee ee a] 4-1 | gS . | pope eh PLT TTT Jett eet} os | TT TU freer gt. SA eee FLEE ee Ee Se Ae ee | , . "yan, couscroremrren vourkos” "° © Vad BASE-EMITTER VOLTAGE i et 6 oe es S Ss ee ee oe oe eo EEE =FErHH § EEF goof TT a ea =e 2 = ea i a oe a | 08 Ft —— Fe . Saad Maes fC C&S eT] os FF 0.08 EE Ear jax ot HEHE Fl Sool 1 PT °F "aus couscton cunmert * °° awn couscron come uw one sare orn ana a a | ea ‘ EEN

8 EEA SAG Nt

os} TPT eo) o2f—t FAA te \\ PrN SESS EH ETI alll oo HN . LTT | oot LENCE oF 88 pihensceumm Vea, COLLECTOREMITER voLTAQE —eESESESESESEeEeeEeEesese ei sausuna SEMICONDUCTOR 253

SAMSUNG SEMICONDUCTOR INC LYE DO I 27964242 0007679 T I : NPN TRIPLE DIFFUSED KSD5016 PLANAR SILICON TRANSISTOR : i x ; T-33-11 : AIEVERSE BIAS SAFE OPERATING AREA owen oenativa i Eero ll PONCE 6 ear elit 3 | EEE Said Eo . ea ni et KENC-EEH SCOUTING HH AEE hae CET) TCO NP] : 2 . 8 . esamsune SEMICONDUCTOR : 254