KSD5013 SAMSUNG | Alldatasheet

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" SAMSUNG SEMICONDUCTOR INC LYE D I 7964142 OOO7bL8 5 I NPN TRIPLE DIFFUSED KSD5013 PLANAR SILICON TRANSISTOR . ‘ . T-33-11 COLOR TV HORIZONTAL OUTPUT . APPLICATIONS (DAMPER DIODE BUILT IN) To-sPEF) High CollectorBase Voltage Vac =1500V. ABSOLUTE MAXIMUM RATINGS (T,=25°C) , | Collector-Base Voltage Veso 1600 v Sa | Cotector-Emitter Voltage Veeo 800 vi! . | Emitter-Base Voltage | Vev0 6 vi § . | Collector Current le 6 al | Collector Current (Peak) le 16 A | Cotector Dissipation re=25°C) | Pe 60 w | i Junction Temperature Tj 150 °C | Storage Temperature Tstg 65160 | °C 7 . 4. Beee 2. Coc 3. Emir ELECTRICAL CHARACTERISTICS (T,=25°C) |___ewactninte [simon | Tontconton [tn [to | mor] vat | aa . Emitter Cutoff Current tesco Veo@4V, oO 40 130 mA DC Current Gain Dee Voe=5V, b=1A 8 . ‘Collector Emitter Saturation Voltage | Vce(sat) | =5A, le=1A 5 v Base-Emitter Saturation Voltage Vee(sat) c=6A, le=1A 1.5 Vv Current Gain Bandwidth Product fr Vee™10V, lo 1A, MHz Damper Diode Turn On. Voltage ve h=6A 2 Vv Fall Time u e=5A, bI=1A | 0.4 uS Ip2=~2A, Vec=200V RL=409 c 5 . - 500 ; (TYP) —e- Se & SAMSUNG SEMICONDUCTOR 243

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we o Bf zse4z42 0007672 5 ff NPN TRIPLE DIFFUSED KSD5014 : PLANAR SILICON. TRANSISTOR SAMSUNG SEMICONDUCTOR Inc. . Ny T-33-11 COLOR TV HORIZONTAL OUTPUT . APPLICATIONS ‘TO-3P(F) . High Collector Base Voltage Vceo=1500V ABSOLUTE MAXIMUM RATINGS (T,=25°C) . Sir Se ey Collector-Base Voltage | Veco 1500 v WY Collector-Emitter Voltage Veeo soo jv Ye Emitter-Base Voltage Ves 6 v * Collector Current le 25 A , Collector Gurrent (Peak) le 10 A Collector Dissipation (To=25°C) | Po so | w Junction Temperature ul 160 | °c | Storage Temperature Tstg ~S5NID-1 °C 1. 300 2. Collector 3. Emiter ELECTRICAL CHARACTERISTICS (T, =25°C) : Bee BE |.) 3 Emitter Cutoff Current lexo Vea=5V, lc=O0 1 mA DC Current Gain Dre Vce=5V. ic=0.5A 8 Collector Emitter Saturation Voltage Vee(sat) | lc=2A, lp=0.6A 8 Vv Base-Emitter Saturation Voltage Vee(sat) | lc=2A, ly=0.6A 1.6 Vv Current Gain Bandwidth Product | fr Vee=10V, =0.5A MHz Fail Time t c= 2A, lg1=0.6A 04 ws g2=~1.2A, RL=1000 AH SAMSUNG SEMICONDUCTOR 246

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