KSD5011

KSD5011 SAMSUNG | Alldatasheet

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su ; rabuau2 coozebe 4 Of SAMSUNG SEMICONDUCTOR INC BNE oo} ° : oo "NPN TRIPLE DIFFUSED KSD5011 . PLANAR SILICON TRANSISTOR T-33-11 : COLOR TV HORIZONTALNOUTPUT APPLICATIONS (DAMPER DIODE BUILT IN) TosPe) High Collector-Base Voltage Veso=1500V . ABSOLUTE MAXIMUM RATINGS (T, =25°C) Lm Coliector-Base Voltage Veao 1800 | v . ey . Collector-Emitter Voltage Veo 800 Iv Emitter-Base Voltage Veso 6 v ‘ Ye . Collector Current k 35 A |, Collector Current (Peak) le 10 | A Collector Dissipation Te =25°C oPo 60 Ww . | Junction Temperature Ty. 150 ig °c Storage Temperature Tstg —55~150 °c 1, Base 2. Cobector 3. Emir 3 | "ELECTRICAL CHARACTERISTICS (T, =25°C) . : [eee Tova | enn [oe [ue Tor] oa oe | Emitter Cutoff Current tevo Ves=4V, =O 130, mA DC Current Gain . bee Vee=5V, lc=0.5A, Collector Emitter Saturation Voltage Vee(sat) Io™2.5A, la=0.8A 8 Vv Base-Emitter Saturation Voltage Vec(sat) e=2.5A, ly=0.8A 1.6 Vv Current Gain Bandwidth Product fr Vee=10V, le=0.5A, MHz ‘Damper Diode Turn On Voltage Vie 4=3.5A, 2 v Fall Time: t Ic=3A, Ip1=0.8A 0.4 us 1e2=—1.6A, Voc™200V RL=66,72 . c 500 . (TYP) € rH SAMSUNG SEMICONDUCTOR ~ 287

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SAMSUNG SEMICONDUCTOR INC L4E O | 2464142 OOO?bES T | ne NPN TRIPLE DIFFUSED KSD5012 PLANAR SILICON TRANSISTOR Pole eR ss: eebeetahenssabetahadatiebs oo oy ‘ T-33-11 COLOR TV HORIZONTAL OUTPUT ~ APPLICATIONS (DAMPER DIODE BUILT IN) To-sPIF) High Collector-Base Voltage Vcso=1500V . . . ABSOLUTE MAXIMUM RATINGS (T.=25°C) & : Collector-Base Voltage Veeo 1600 v ye H Collector-Emitter Voltage Vero 800 v . : Emitter-Base Voltage Vewo 6 Vv : ‘ Collector Current ie 6 A . Ya Collector Current (Peak) Ie 16 A i Collector Dissipation (To=25°C) Po 60 w Junction Temperature Ty + 16 Me Storage Temperature Tstg —55~150 Cc : 1, Base 2. Cotctr 3. Emiter ” ELECTRICAL CHARACTERISTICS (T, =25°C) : [___ erates symbot [test conaion [wn [ve [tox [ von | . Emitter Cutoff Current 'es0 Veo=4V, lo=0 130 | mA DC Current Gain Dee Vee=5V, Ic= 1A Collector Emitter Saturation Voltage. Vee(sat) | lo=4A, le=0.8A 5 Vv . Base-Emitter Saturation Voltage Vee(sat) lo=4A, le=0.8A 1.5 wv Current Gain Bandwidth Product tr Vee=10V, b=1A * MHz . Damper Diode Turn On Voltage Me - b=5A 2 v Fall Time t Ic=4A, le1=0.8A 0.4 “Ss . Ie2=—1,6A, Voc=200V . RL=500 c . 600 : . . (TYP) E . ee & SAMSUNG SEMICONDUCTOR MO

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